SCHEMBL4313614

SCHEMBL4313614

O=CNCl.O=[SH2]=O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL137937 0.87
Hydrochloric Acid SCHEMBL4395993 0.82
SCHEMBL6855556 0.58
SCHEMBL2108630 0.58
SCHEMBL91 0.58
SCHEMBL10886783 0.52
Methane SCHEMBL2045187 0.52
Fluoride SCHEMBL6881674 0.52
SCHEMBL365541 0.52
SCHEMBL539827 0.51

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20090227111-A1 BARRIER FILM MATERIAL AND PATTERN FORMATION METHOD USING THE SAME PANASONIC CORPORATION (JP) 2009-09-10 US disclosed
US-7550253-B2 Barrier film material and pattern formation method using the same PANASONIC CORPORATION (JP) 2009-06-23 US disclosed
CN-100456421-C Barrier film material and pattern formation method using the same MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 2009-01-28 CN disclosed
EP-1594004-A2 Barrier film material and pattern formation method using the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-11-09 EP disclosed
CN-1661776-A Barrier film material and pattern formation method using the same MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 2005-08-31 CN disclosed
US-20050186516-A1 Barrier film material and pattern formation method using the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2005-08-25 US disclosed