⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3287970 | 0.89 | — | — | |
| SCHEMBL64082 | 0.89 | — | — | |
| SCHEMBL6809637 | 0.89 | — | — | |
| SCHEMBL16335687 | 0.89 | — | — | |
| SCHEMBL6082334 | 0.87 | — | — | |
| SCHEMBL14876 | 0.87 | — | — | |
| SCHEMBL967832 | 0.87 | — | — | |
| SCHEMBL63313 | 0.82 | — | — | |
| SCHEMBL25356478 | 0.75 | — | — | |
| SCHEMBL25356576 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 103 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12513981-B2 | Semiconductor device | VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) | 2025-12-30 | — | — | US | claimed |
| US-20240250085-A1 | SEMICONDUCTOR DEVICE | VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) | 2024-07-25 | — | — | US | claimed |
| CN-118198006-A | Semiconductor device with a semiconductor device having a plurality of semiconductor chips | 世界先进积体电路股份有限公司 | 2024-06-14 | — | — | CN | claimed |
| CN-116606156-A | Graphene/rare earth composite aerogel material, preparation method thereof and nuclear reactor heat insulation material | 中广核研究院有限公司 | 2023-08-18 | — | — | CN | claimed |
| CN-110137180-B | Ferroelectric device and method of manufacturing the same | 爱思开海力士有限公司 | 2023-06-06 | — | — | CN | claimed |
| US-10847541-B2 | Ferroelectric memory device and a method of manufacturing the same | SK Hynix Inc. (KR) | 2020-11-24 | — | — | US | claimed |
| CN-110137180-A | Ferro-electric device and its manufacturing method | 爱思开海力士有限公司 | 2019-08-16 | — | — | CN | claimed |
| US-20190244973-A1 | FERROELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME | SK Hynix Inc. (KR) | 2019-08-08 | — | — | US | claimed |
| CN-109390476-A | A kind of QLED device and preparation method thereof with graphene oxide boundary layer | TCL集团股份有限公司 | 2019-02-26 | — | — | CN | claimed |
| US-20190019801-A1 | FERROELECTRIC MEMORY DEVICE AND A METHOD OF MANUFACTURING THE SAME | SK Hynix Inc. (KR) | 2019-01-17 | — | — | US | claimed |
| US-8278735-B2 | Yttrium and titanium high-k dielectric films | INTERMOLECULAR, INC. (US) | 2012-10-02 | — | — | US | claimed |
| US-20120061799-A1 | Yttrium and Titanium High-K Dielectric Films | HASHIM IMRAN (US) | 2012-03-15 | — | — | US | claimed |
| CN-101894832-A | Light emitting diode structure for generating white light | HELIO OPTOELECTRONICS CORP | 2010-11-24 | — | — | CN | claimed |
| US-5108670-A | Heating with microwave dispersing yttria throughout consolidated body | MARTIN MARIETTA ENERGY SYSTEMS, INC. (US) | 1992-04-28 | — | — | US | claimed |
| US-5013694-A | Hardness and fracture toughness | MARTIN MARIETTA ENERGY SYSTEMS, INC. (US) | 1991-05-07 | — | — | US | claimed |
| JP-5005883-A | — | — | None | — | — | JP | disclosed |
| US-12641806-B2 | Capacitor structure including a buffer layer and methods of formation | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-05-26 | — | — | US | disclosed |
| US-5108670-A | Heating with microwave dispersing yttria throughout consolidated body | MARTIN MARIETTA ENERGY SYSTEMS, INC. (US) | 1992-04-28 | — | — | US | disclosed |
| US-5013694-A | Hardness and fracture toughness | MARTIN MARIETTA ENERGY SYSTEMS, INC. (US) | 1991-05-07 | — | — | US | disclosed |
| US-5013694-A | Hardness and fracture toughness | MARTIN MARIETTA ENERGY SYSTEMS, INC. (US) | 1991-05-07 | — | — | US | disclosed |