⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL686265 | 0.88 | — | — | |
| SCHEMBL686264 | 0.88 | — | — | |
| SCHEMBL12994667 | 0.88 | — | — | |
| SCHEMBL15461959 | 0.86 | — | — | |
| SCHEMBL111509 | 0.86 | CYP3A4 (0.36) | — | |
| SCHEMBL685827 | 0.86 | — | — | |
| SCHEMBL17754132 | 0.85 | SMN1; SMN2 (0.30) | — | |
| SCHEMBL22446097 | 0.85 | SMN1; SMN2 (0.30) | — | |
| SCHEMBL18897950 | 0.84 | — | — | |
| SCHEMBL18793138 | 0.83 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 54 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9910358-B2 | Patterning process and chemically amplified negative resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-06 | — | — | US | disclosed |
| US-20170329224-A1 | PROCESS FOR PRODUCING PHOTORESIST PATTERN AND PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-11-16 | — | — | US | disclosed |
| US-9645490-B2 | Salt, acid generator, photoresist composition, and method for producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-05-09 | — | — | US | disclosed |
| US-9618850-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-20160200702-A1 | SALT, ACID GENERATOR, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-07-14 | — | — | US | disclosed |
| US-20160170298-A1 | SALT, ACID GENERATOR, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-06-16 | — | — | US | disclosed |
| US-20160139508-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-05-19 | — | — | US | disclosed |
| US-9221928-B2 | Fluorine-containing sulfonate resin, fluorine-containing N-sulfonyloxyimide resin, resist composition and pattern formation method | CENTRAL GLASS COMPANY, LIMITED (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9221928-B2 | Fluorine-containing sulfonate resin, fluorine-containing N-sulfonyloxyimide resin, resist composition and pattern formation method | CENTRAL GLASS COMPANY, LIMITED (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9152045-B2 | Fluorine-containing sulfonate, fluorine-containing sulfonate resin, resist composition and pattern formation method | CENTRAL GLASS COMPANY, LIMITED (JP) | 2015-10-06 | — | — | US | disclosed |
| US-7887990-B2 | Fluorine-containing compound, fluorine-containing polymer, postive-type resist composition, and patterning process using same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2011-02-15 | — | — | US | disclosed |
| WO-2010140483-A1 | FLUORINE-CONTAINING COMPOUND, FLUORINE-CONTAINING POLYMER COMPOUND, RESIST COMPOSITION, TOP COAT COMPOSITION AND PATTERN FORMATION METHOD | セントラル硝子株式会社 (JP) | 2010-12-09 | — | — | WO | disclosed |
| WO-2010044372-A1 | FLUORINE-CONTAINING SULFONATES HAVING POLYMERIZABLE ANIONS AND MANUFACTURING METHOD THEREFOR, FLUORINE-CONTAINING RESINS, RESIST COMPOSITIONS, AND PATTERN-FORMING METHOD USING SAME | セントラル硝子株式会社 (JP) | 2010-04-22 | — | — | WO | disclosed |
| US-7541131-B2 | Resist composition, compound for use in the resist composition and pattern forming method using the resist composition | FUJIFILM CORPORATION (JP) | 2009-06-02 | — | — | US | disclosed |
| US-20090061353-A1 | Positive-Type Resist Composition | CENTRAL GLASS COMPANY, LIMITED (JP) | 2009-03-05 | — | — | US | disclosed |
| US-20090011199-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer, Negative-Type Resist Composition, and Patterning Process Using Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2009-01-08 | — | — | US | disclosed |
| US-20080311507-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer, Postive-Type Resist Composition, And Patterning Process Using Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20070172761-A1 | Positive photosensitive composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2007-07-26 | — | — | US | disclosed |
| US-20070141512-A1 | Photosensitive composition, pattern-forming method using the photosensitve composition and compound in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-06-21 | — | — | US | disclosed |
| EP-1764647-A2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM Corporation (JP) | 2007-03-21 | — | — | EP | disclosed |