⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18799419 | 1.00 | — | — | |
| SCHEMBL5195583 | 0.81 | RECQL (0.36) | — | |
| SCHEMBL21567777 | 0.81 | — | — | |
| SCHEMBL24760217 | 0.81 | — | — | |
| SCHEMBL15181039 | 0.79 | — | — | |
| SCHEMBL15275722 | 0.79 | — | — | |
| SCHEMBL14602122 | 0.79 | — | — | |
| SCHEMBL13371143 | 0.76 | — | — | |
| SCHEMBL5408738 | 0.75 | — | — | |
| SCHEMBL10061184 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 206 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-01-16 | — | — | US | disclosed |
| US-11835857-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11822240-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11747726-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-05 | — | — | US | disclosed |
| US-11709425-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-11709425-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-11703756-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11693316-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-04 | — | — | US | disclosed |
| US-11667605-B2 | Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-06-06 | — | — | US | disclosed |
| US-11644751-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-05-09 | — | — | US | disclosed |
| WO-2010140483-A1 | FLUORINE-CONTAINING COMPOUND, FLUORINE-CONTAINING POLYMER COMPOUND, RESIST COMPOSITION, TOP COAT COMPOSITION AND PATTERN FORMATION METHOD | セントラル硝子株式会社 (JP) | 2010-12-09 | — | — | WO | disclosed |
| US-20100304303-A1 | Novel Sulfonic Acid Salt and Derivative Thereof, Photoacid Generator Agent, and Resist Material and Pattern Formation Method Using the Photoacid Generator Agent | CENTRAL GLASS COMPANY, LIMITED (JP) | 2010-12-02 | — | — | US | disclosed |
| US-20090061353-A1 | Positive-Type Resist Composition | CENTRAL GLASS COMPANY, LIMITED (JP) | 2009-03-05 | — | — | US | disclosed |
| US-20090061353-A1 | Positive-Type Resist Composition | CENTRAL GLASS COMPANY, LIMITED (JP) | 2009-03-05 | — | — | US | disclosed |
| US-20090011199-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer, Negative-Type Resist Composition, and Patterning Process Using Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2009-01-08 | — | — | US | disclosed |
| US-20090011199-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer, Negative-Type Resist Composition, and Patterning Process Using Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2009-01-08 | — | — | US | disclosed |
| US-20080311507-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer, Postive-Type Resist Composition, And Patterning Process Using Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080311507-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer, Postive-Type Resist Composition, And Patterning Process Using Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080187860-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-7169541-B2 | Compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-30 | — | — | US | disclosed |