⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12837296 | 0.91 | — | — | |
| SCHEMBL4407884 | 0.86 | — | — | |
| SCHEMBL21249354 | 0.85 | — | — | |
| SCHEMBL685705 | 0.83 | — | — | |
| SCHEMBL685614 | 0.83 | — | — | |
| SCHEMBL21249353 | 0.82 | — | — | |
| SCHEMBL12503401 | 0.82 | — | — | |
| SCHEMBL686049 | 0.80 | — | — | |
| SCHEMBL685538 | 0.78 | — | — | |
| SCHEMBL12837345 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8173352-B2 | Resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-05-08 | — | — | US | disclosed |
| US-8057983-B2 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-15 | — | — | US | disclosed |
| US-20110200936-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-08-18 | — | — | US | disclosed |
| US-20110165521-A1 | PROCESS FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-07-07 | — | — | US | disclosed |
| US-20110059400-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-03-10 | — | — | US | disclosed |
| US-20100203446-A1 | CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-08-12 | — | — | US | disclosed |
| US-20100136481-A1 | RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-06-03 | — | — | US | disclosed |
| US-20090269695-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-10-29 | — | — | US | disclosed |
| US-7572570-B2 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-11 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |