⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2101285 | 0.97 | — | — | |
| SCHEMBL18788585 | 0.94 | — | — | |
| Ammonia Solution, Strong SCHEMBL3253403 | 0.72 | — | — | |
| SCHEMBL1349696 | 0.71 | — | — | |
| SCHEMBL4610493 | 0.71 | — | — | |
| SCHEMBL5469991 | 0.69 | — | — | |
| SCHEMBL2507798 | 0.69 | — | — | |
| SCHEMBL4881549 | 0.69 | — | — | |
| SCHEMBL4872790 | 0.69 | — | — | |
| SCHEMBL33153 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10377948-B2 | Etching composition and method for fabricating semiconductor device by using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-08-13 | — | — | US | claimed |
| US-20180148645-A1 | ETCHING COMPOSITION AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-05-31 | — | — | US | claimed |
| WO-2009072810-A2 | ETCHANT COMPOSITION FOR GLASS SUBSTRATE | CHEMTRONICS CO., LTD. (KR) | 2009-06-11 | — | — | WO | claimed |
| US-10800972-B2 | Etching composition and method for fabricating semiconductor device by using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-10-13 | — | — | US | disclosed |
| US-20190338186-A1 | ETCHING COMPOSITION AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-11-07 | — | — | US | disclosed |
| US-10377948-B2 | Etching composition and method for fabricating semiconductor device by using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-08-13 | — | — | US | disclosed |
| US-20180148645-A1 | ETCHING COMPOSITION AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-05-31 | — | — | US | disclosed |
| US-20150200259-A1 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-07-16 | — | — | US | disclosed |
| WO-2009072810-A2 | ETCHANT COMPOSITION FOR GLASS SUBSTRATE | CHEMTRONICS CO., LTD. (KR) | 2009-06-11 | — | — | WO | disclosed |