SCHEMBL4431900

SCHEMBL4431900

c1ccc2c(-c3cc(-c4cccc5ccccc45)[nH]n3)cccc2c1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 7/20 0.51
SMN1; SMN2 Q16637 6/20 0.51
MEN1 O00255 5/20 0.51
KMT2A Q03164 5/20 0.51
NFKB1 P19838 4/20 0.51
NFKB2 Q00653 4/20 0.51
RELA Q04206 4/20 0.51
KDM4E B2RXH2 4/20 0.51
RAB9A P51151 4/20 0.51
TP53 P04637 3/20 0.51
GAA P10253 2/20 0.51
HSD17B10 Q99714 2/20 0.51
NPC1 O15118 2/20 0.51
CASP3 P42574 1/20 0.51
SENP8 Q96LD8 1/20 0.51
SENP7 Q9BQF6 1/20 0.51
SENP6 Q9GZR1 1/20 0.51
ALPL P05186 1/20 0.49
ALOX15 P16050 6/20 0.47
HPGD P15428 5/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19295773 0.82 MAPT (0.77) MAPTSMN1; SMN2MEN1KMT2ANFKB1
SCHEMBL30588951 0.81 HSD17B10 (0.55) SMN1; SMN2MEN1KMT2AKDM4EGAA
SCHEMBL644838 0.81 HDAC3 (0.48) MAPTSMN1; SMN2MEN1KMT2ANFKB1
SCHEMBL2899717 0.81 HSD17B10 (0.55) SMN1; SMN2MEN1KMT2AKDM4EGAA
SCHEMBL2614365 0.81 KDM4E (0.60) MAPTSMN1; SMN2MEN1KMT2AKDM4E
SCHEMBL4895919 0.81 KDM4E (0.50) MAPTSMN1; SMN2NFKB1NFKB2RELA
SCHEMBL5261707 0.81 HDAC3 (0.45) MAPTSMN1; SMN2MEN1KMT2ANFKB1
SCHEMBL12591902 0.77 MAPT (0.51) MAPTSMN1; SMN2MEN1KMT2AKDM4E
SCHEMBL16841248 0.77 MEN1 (0.62) MAPTSMN1; SMN2MEN1KMT2ANFKB1
SCHEMBL1752965 0.76 KDM4E (0.44) MAPTSMN1; SMN2MEN1KMT2AKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20090184092-A1 Palladium-Selective Etching Solution and Method for Controlling Etching Selectivity KANTO KAGAKU KABUASHIKI KAISHA (JP) 2009-07-23 US disclosed