⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9059361 | 0.87 | — | — | |
| SCHEMBL7543167 | 0.82 | — | — | |
| SCHEMBL11676053 | 0.82 | — | — | |
| SCHEMBL31207125 | 0.82 | — | — | |
| SCHEMBL454133 | 0.82 | — | — | |
| SCHEMBL7648855 | 0.82 | — | — | |
| SCHEMBL3200976 | 0.82 | — | — | |
| SCHEMBL7544100 | 0.82 | — | — | |
| SCHEMBL21273333 | 0.82 | — | — | |
| SCHEMBL139031 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7501680-B2 | Memory device having nanocrystals in memory cell | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-03-10 | — | — | US | claimed |
| US-20070257297-A1 | Memory device having nanocrystals and methods of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-11-08 | — | — | US | claimed |
| US-10686069-B2 | Semiconductor device having vertical channel | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-06-16 | — | — | US | disclosed |
| US-20190157452-A1 | SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-05-23 | — | — | US | disclosed |
| US-20160163708-A1 | SEMICONDUCTOR DEVICE INCLUDING TRANSISTORS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2016-06-09 | — | — | US | disclosed |
| US-7501680-B2 | Memory device having nanocrystals in memory cell | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-03-10 | — | — | US | disclosed |
| US-20070257297-A1 | Memory device having nanocrystals and methods of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-11-08 | — | — | US | disclosed |
| CN-101030600-A | Memory device comprising nanocrystals and method for producing the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2007-09-05 | — | — | CN | disclosed |