SCHEMBL451246

SCHEMBL451246

CCC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.56

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
GRIN2D O15399 7/20 0.56
GRIN3B O60391 7/20 0.56
GRIN1 Q05586 7/20 0.56
GRIN2A Q12879 7/20 0.56
GRIN2B Q13224 7/20 0.56
GRIN2C Q14957 7/20 0.56
GRIN3A Q8TCU5 7/20 0.56
ALDH1A1 P00352 3/20 0.43
MEN1 O00255 1/20 0.41
KMT2A Q03164 1/20 0.41
HSD17B10 Q99714 1/20 0.40
PKM P14618 1/20 0.40
TSHR P16473 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL451248 1.00 GRIN2D (0.56) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
Ammonia Solution, Strong SCHEMBL5271542 0.97 GRIN2D (0.54) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
Adamantane SCHEMBL11758411 0.97 GRIN2D (0.54) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
Hydrochloric Acid SCHEMBL5274218 0.94 GRIN2D (0.52) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL22117562 0.87
SCHEMBL2450643 0.82 GRIN2D (0.71) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL1939771 0.80 GRIN2D (0.41) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL12758973 0.78 GRIN2D (0.39) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL12758992 0.78 GRIN2D (0.39) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL11700078 0.78 GRIN2D (0.39) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 96 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114763394-A Nonionic hyperbranched hydrophobically associating polyacrylamide thickening agent and preparation method thereof 中国石油天然气股份有限公司 2022-07-19 CN claimed
CN-114751829-A Polymerizable nonionic surfactant containing adamantane structure and preparation method thereof 中国石油天然气股份有限公司 2022-07-15 CN claimed
WO-2024143131-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ONIUM SALT 富士フイルム株式会社 2024-07-04 WO disclosed
CN-113939767-B Positive photosensitive resin composition and organic EL element partition wall 日保丽公司 2024-06-25 CN disclosed
CN-117882008-A Positive photosensitive resin composition 日保丽公司 2024-04-12 CN disclosed
CN-117480451-A Positive photosensitive resin composition and organic EL element partition wall 日保丽公司 2024-01-30 CN disclosed
WO-2024017921-A1 DEVELOPER TOLERANCE RESIST UNDERLAYER COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN MERCK PATENT GMBH (DE) 2024-01-25 WO disclosed
US-20230408922-A1 APPLICATION LIQUID FOR OPTICAL MEMBER, POLYMER, PHOTOSENSITIVE APPLICATION LIQUID, METHOD FOR PRODUCING CURED FILM, METHOD FOR PRODUCING PATTERNED CURED FILM, AND METHOD FOR PRODUCING POLYMER CENTRAL GLASS COMPANY, LIMITED (JP) 2023-12-21 US disclosed
CN-116940897-A Photosensitive resin composition and organic EL element partition wall 株式会社力森诺科 2023-10-24 CN disclosed
US-20230333468-A1 RESIN COMPOSITION, CURED FILM, METHOD FOR MANUFACTURING CURED FILM, SUBSTRATE HAVING MULTILAYER FILM, METHOD FOR PRODUCING PATTERNED SUBSTRATE, PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERN CURED FILM, METHOD FOR PRODUCING POLYMER, AND METHOD FOR PRODUCING RESIN COMPOSITION CENTRAL GLASS COMPANY, LIMITED (JP) 2023-10-19 US disclosed
CN-116601244-A Coating liquid for optical member, polymer, cured film, photosensitive coating liquid, pattern cured film, optical member, solid-state imaging element, display device, silicone compound, stabilizer used in coating liquid, method for producing cured film, method for producing pattern cured film, and method for producing polymer 中央硝子株式会社 2023-08-15 CN disclosed
US-20050123854-A1 Positive resist composition and base material carrying layer of the positive resist composition TOKYO OHKA KOGYO CO., LTD. 2005-06-09 US disclosed
US-20050079445-A1 Positive resist composition and method of forming resist pattern using same TOKYO OHKA KOGYO CO., LTD. (JP) 2005-04-14 US disclosed
US-20050053861-A1 Onium salt compound and radiation-sensitive resin composition JSR CORPORATION (JP) 2005-03-10 US disclosed
US-6787284-B2 Alkali-soluble polysilsesquioxane with e.g. units of p-hydroxybenzylsilanetriol and phenylsilanetriol, an acid generator, and an acid decomposable ester, ether or carbonate-protected phenolic compound; wavelengths equal to or shorter than that of KrF excimer laser TOKYO OHKA KOGYO CO., LTD. (JP) 2004-09-07 US disclosed
US-20040152860-A1 Polysilsesquioxane copolymer with unit containing an alkali-soluble group and unit containing a non-acid decomposable alkali insoluble group, e.g. phenylsilanetriol and hydroxybenzylsilanetriol units; use with wavelengths shorter than a KrF excimer laser TOKYO OHKA KOGYO CO., LTD. 2004-08-05 US disclosed
US-20040019152-A1 Alcoholic hydroxyl group-, aromatic ring- and protolytically leaving group-containing copolymer NIPPON SHOKUBAI CO., LTD. 2004-01-29 US disclosed
EP-1357428-A1 Alcoholic hydroxyl group-, aromatic ring- and protolytically leaving group-containing copolymer Nippon Shokubai Co., Ltd. (JP) 2003-10-29 EP disclosed
US-20030170561-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-09-11 US disclosed
US-20020025495-A1 Positive resist composition and base material carrying layer of the positive resist composition TOKYO OHKA KOGYO CO., LTD 2002-02-28 US disclosed