⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5012702 | 0.89 | — | — | |
| Zinc Ion SCHEMBL3702978 | 0.89 | — | — | |
| SCHEMBL2545961 | 0.89 | — | — | |
| SCHEMBL29508147 | 0.89 | — | — | |
| SCHEMBL442846 | 0.89 | — | — | |
| SCHEMBL456156 | 0.87 | — | — | |
| SCHEMBL235614 | 0.87 | — | — | |
| SCHEMBL1438487 | 0.87 | — | — | |
| SCHEMBL2589353 | 0.82 | — | — | |
| SCHEMBL3627863 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 771 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250236791-A1 | QUANTUM DOT COMPLEX, QUANTUM DOT COMPOSITION INCLUDING THE SAME, AND ELECTRONIC APPARATUS INCLUDING THE QUANTUM DOT COMPLEX | SAMSUNG DISPLAY CO., LTD. (KR) | 2025-07-24 | — | — | US | claimed |
| CN-120138582-A | Method for preparing CIGS absorbing layer and solar cell using CIGS absorbing layer prepared by same | 河北大学 | 2025-06-13 | — | — | CN | claimed |
| US-12302665-B2 | Transparent energy-harvesting devices | BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY (US) | 2025-05-13 | — | — | US | claimed |
| CN-222764228-U | Heterojunction cell and photovoltaic module | 天合光能股份有限公司 | 2025-04-15 | — | — | CN | claimed |
| CN-119530864-A | Photoelectrochemical photoanode sensitized by environment-friendly manganese-doped copper indium gallium sulfide quantum dots, preparation method thereof and photoelectrochemical application | 电子科技大学 | 2025-02-28 | — | — | CN | claimed |
| CN-119371901-A | Toughened film and preparation method thereof | 合肥福纳科技有限公司 | 2025-01-28 | — | — | CN | claimed |
| CN-114093860-B | Laminated solar cell and preparation method thereof | 深圳先进技术研究院 | 2024-09-13 | — | — | CN | claimed |
| CN-118522806-A | Semitransparent solar cell, manufacturing method thereof and laminated cell | 隆基绿能科技股份有限公司 | 2024-08-20 | — | — | CN | claimed |
| CN-118522819-A | Manufacturing method of solar cell | 隆基绿能科技股份有限公司 | 2024-08-20 | — | — | CN | claimed |
| CN-118522818-A | Multi-component compound film, production method and production equipment thereof and photovoltaic device | 隆基绿能科技股份有限公司 | 2024-08-20 | — | — | CN | claimed |
| US-20070169812-A1 | High-throughput printing of semiconductor precursor layer from nanoflake particles | NANOSOLAR, INC. (US) | 2007-07-26 | — | — | US | claimed |
| US-20070169810-A1 | High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor | NANOSOLAR, INC. (US) | 2007-07-26 | — | — | US | claimed |
| US-20070169809-A1 | High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides | NANOSOLAR, INC. (US) | 2007-07-26 | — | — | US | claimed |
| US-20070169811-A1 | High-throughput printing of semiconductor precursor layer by use of thermal and chemical gradients | NANOSOLAR, INC. (US) | 2007-07-26 | — | — | US | claimed |
| US-20070163639-A1 | High-throughput printing of semiconductor precursor layer from microflake particles | NANOSOLAR, INC. (US) | 2007-07-19 | — | — | US | claimed |
| US-20070163638-A1 | Photovoltaic devices printed from nanostructured particles | NANOSOLAR, INC. (US) | 2007-07-19 | — | — | US | claimed |
| US-20070163637-A1 | High-throughput printing of semiconductor precursor layer from nanoflake particles | NANOSOLAR, INC. (US) | 2007-07-19 | — | — | US | claimed |
| US-20070166453-A1 | High-throughput printing of chalcogen layer | NANOSOLAR, INC. (US) | 2007-07-19 | — | — | US | claimed |
| US-20070163640-A1 | High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides | NANOSOLAR, INC. (US) | 2007-07-19 | — | — | US | claimed |
| US-20070089782-A1 | Spherical or grain-shaped semiconductor element for use in solar cells and method for producing the same; method for producing a solar cell comprising said semiconductor element and solar cell | SCHEUTEN GLASGROEP (NL) | 2007-04-26 | — | — | US | claimed |