SCHEMBL4538004

SCHEMBL4538004

CCCCCCCCCCCCCCCCCCCCCCCOc1ccc(S(=O)(=O)O)cc1C

nearest known ligand 0.69

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
S1PR3 Q99500 2/20 0.69
WDR5 P61964 3/20 0.53
ESR1 P03372 7/20 0.51
THRA P10827 1/20 0.51
THRB P10828 1/20 0.51
S1PR2 O95136 1/20 0.47
S1PR1 P21453 1/20 0.47
LPAR2 Q9HBW0 1/20 0.47
HTT P42858 2/20 0.45
ALDH1A1 P00352 1/20 0.44
LMNA P02545 1/20 0.44
SMN1; SMN2 Q16637 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4527635 1.00 S1PR3 (0.69) S1PR3WDR5ESR1THRATHRB
SCHEMBL4539139 1.00 S1PR3 (0.69) S1PR3WDR5ESR1THRATHRB
SCHEMBL4530113 1.00 S1PR3 (0.69) S1PR3WDR5ESR1THRATHRB
SCHEMBL4533583 1.00 S1PR3 (0.69) S1PR3WDR5ESR1THRATHRB
SCHEMBL4522857 1.00 S1PR3 (0.69) S1PR3WDR5ESR1THRATHRB
SCHEMBL4536045 1.00 S1PR3 (0.69) S1PR3WDR5ESR1THRATHRB
SCHEMBL4527901 1.00 S1PR3 (0.69) S1PR3WDR5ESR1THRATHRB
SCHEMBL4537948 1.00 S1PR3 (0.69) S1PR3WDR5ESR1THRATHRB
SCHEMBL4532999 1.00 S1PR3 (0.69) S1PR3WDR5ESR1THRATHRB
SCHEMBL4530018 1.00 S1PR3 (0.69) S1PR3WDR5ESR1THRATHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7534554-B2 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2009-05-19 US disclosed
US-20080233518-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH SUCH CHEMICALLY AMPLIFIED RESIST COMPOSITION NEC ELECTRONICS CORPORATION (JP) 2008-09-25 US disclosed
US-7396633-B2 Damascene process; forming connectors; exposure; development; using acid generator, quencher and buffer NEC ELECTRONICS CORPORATION (JP) 2008-07-08 US disclosed
US-20040259029-A1 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2004-12-23 US disclosed