⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL32684069 | 0.64 | — | — | |
| SCHEMBL31738919 | 0.62 | — | — | |
| SCHEMBL6972020 | 0.59 | — | — | |
| SCHEMBL31738916 | 0.59 | — | — | |
| SCHEMBL25406760 | 0.43 | — | — | |
| SCHEMBL37498 | 0.43 | — | — | |
| SCHEMBL134582 | 0.43 | — | — | |
| SCHEMBL1030445 | 0.43 | — | — | |
| SCHEMBL8160072 | 0.43 | — | — | |
| SCHEMBL8166909 | 0.43 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4748968-A1 | METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS | Hansol Chemical Co., Ltd (KR) | 2026-05-27 | — | — | EP | claimed |
| EP-4667616-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | Hansol Chemical Co., Ltd (KR) | 2025-12-24 | — | — | EP | claimed |
| US-20250369114-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | HANSOL CHEMICAL CO LTD (KR) | 2025-12-04 | — | — | US | claimed |
| WO-2025018802-A1 | METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS | 주식회사 한솔케미칼 | 2025-01-23 | — | — | WO | claimed |
| US-11784026-B2 | Substrate processing apparatus, material layer deposition apparatus, and atmospheric pressure chemical vapor deposition apparatus | SAMSUNG ELECTRONICS CO., LTD. | 2023-10-10 | — | — | US | claimed |
| US-20210222300-A1 | SUBSTRATE PROCESSING APPARATUS, MATERIAL LAYER DEPOSITION APPARATUS, AND ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION APPARATUS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-07-22 | — | — | US | claimed |
| EP-4748968-A1 | METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS | Hansol Chemical Co., Ltd (KR) | 2026-05-27 | — | — | EP | disclosed |
| EP-4667616-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | Hansol Chemical Co., Ltd (KR) | 2025-12-24 | — | — | EP | disclosed |
| US-20250369114-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | HANSOL CHEMICAL CO LTD (KR) | 2025-12-04 | — | — | US | disclosed |
| US-20250038003-A1 | LOW TEMPERATURE MOLYBDENUM DEPOSITION ASSISTED BY SILICON-CONTAINING REACTANTS | LAM RESEARCH CORPORATION (US) | 2025-01-30 | — | — | US | disclosed |
| WO-2025018802-A1 | METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS | 주식회사 한솔케미칼 | 2025-01-23 | — | — | WO | disclosed |
| EP-4449479-A1 | LOW TEMPERATURE MOLYBDENUM DEPOSITION ASSISTED BY SILICON-CONTAINING REACTANTS | Lam Research Corporation (US) | 2024-10-23 | — | — | EP | disclosed |
| CN-118540936-A | Semiconductor device and method for manufacturing the same | 三星电子株式会社 | 2024-08-23 | — | — | CN | disclosed |
| US-20190333754-A1 | Method of Forming a Low-K Layer and Method of Forming a Semiconductor Device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-10-31 | — | — | US | disclosed |
| EP-3561860-A1 | METHOD OF FORMING A LOW-K LAYER AND METHOD OF FORMING A SEMICONDUCTOR DEVICE | Samsung Electronics Co., Ltd. (KR) | 2019-10-30 | — | — | EP | disclosed |
| EP-2637968-B1 | PROCESS FOR SELECTIVE CLEAVAGE OF HIGHER SILANES | EVONIK DEGUSSA GMBH (DE) | 2017-12-06 | — | — | EP | disclosed |
| US-9481580-B2 | Selective splitting of high order silanes | EVONIK DEGUSSA GMBH (DE) | 2016-11-01 | — | — | US | disclosed |
| US-20130294995-A1 | SELECTIVE SPLITTING OF HIGH ORDER SILANES | EVONIK DEGUSSA GMBH (DE) | 2013-11-07 | — | — | US | disclosed |
| EP-2637968-A2 | PROCESS FOR SELECTIVE CLEAVAGE OF HIGHER SILANES | Evonik Degussa GmbH (DE) | 2013-09-18 | — | — | EP | disclosed |
| WO-2012062560-A2 | PROCESS FOR SELECTIVE CLEAVAGE OF HIGHER SILANES | EVONIK DEGUSSA GMBH (DE) | 2012-05-18 | — | — | WO | disclosed |