SCHEMBL4549129

SCHEMBL4549129

CC(C)(C)N/C=C\NC(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4969030 1.00
SCHEMBL4969038 1.00
SCHEMBL5489375 0.96
SCHEMBL5489373 0.96
SCHEMBL23170009 0.86
SCHEMBL14946733 0.86
SCHEMBL24070452 0.86
SCHEMBL15433917 0.81
SCHEMBL13187093 0.81
SCHEMBL10057929 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10253408-B2 Compound, thin film-forming material, and thin film manufacturing method ADEKA CORPORATION (JP) 2019-04-09 US disclosed
EP-3312187-A1 METHOD FOR MANUFACTURING NOVEL COMPOUND, RAW MATERIAL FOR THIN FILM FORMATION, AND THIN FILM Adeka Corporation (JP) 2018-04-25 EP disclosed
US-20180051372-A1 NOVEL COMPOUND, THIN FILM-FORMING MATERIAL, AND THIN FILM MANUFACTURING METHOD ADEKA CORPORATION (JP) 2018-02-22 US disclosed
US-20180051372-A1 NOVEL COMPOUND, THIN FILM-FORMING MATERIAL, AND THIN FILM MANUFACTURING METHOD ADEKA CORPORATION (JP) 2018-02-22 US disclosed
US-9371452-B2 Film-forming material, group IV metal oxide film and vinylenediamide complex TOSOH CORPORATION (JP) 2016-06-21 US disclosed
US-9219232-B2 Antimony and germanium complexes useful for CVD/ALD of metal thin films ENTEGRIS, INC. (US) 2015-12-22 US disclosed
US-9120825-B2 Hydrosilane derivative, method for producing same, and method for producing silicon-containing thin film TOSOH CORPORATION (JP) 2015-09-01 US disclosed
US-20140227456-A1 FILM-FORMING MATERIAL, GROUP IV METAL OXIDE FILM AND VINYLENEDIAMIDE COMPLEX SAGAMI CHEMICAL RESEARCH INSTITUTE (JP) 2014-08-14 US disclosed
US-20140220733-A1 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2014-08-07 US disclosed
US-8709863-B2 Antimony and germanium complexes useful for CVD/ALD of metal thin films ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2014-04-29 US disclosed
US-8093140-B2 Amorphous Ge/Te deposition process ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2012-01-10 US disclosed
US-20110263100-A1 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2011-10-27 US disclosed
US-8008117-B2 Antimony and germanium complexes useful for CVD/ALD of metal thin films ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2011-08-30 US disclosed
US-20110071141-A1 Pesticidial Condensed-Ring Aryl Compounds BAYER CROPSCIENCE AG 2011-03-24 US disclosed
US-20100317150-A1 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2010-12-16 US disclosed
US-7838329-B2 precursor mixture comprising germanium bis(n-butyl, N,N-diisopropylamidinate, and solvent; chemical vapor depositing a germanium-antimony-tellurium (GST) films; microelectronic devices; infrared detectors ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2010-11-23 US disclosed
WO-2010008065-A1 METHOD FOR MANUFACTURING SUBSTITUTED ETHYNYL GOLD-NITROGEN CONTAINING HETEROCYCLIC CARBENE COMPLEX 宇部興産株式会社 (JP) 2010-01-21 WO disclosed
US-20090305458-A1 precursor mixture comprising germanium bis(n-butyl, N,N-diisopropylamidinate, and solvent; chemical vapor depositing a germanium-antimony-tellurium (GST) films; microelectronic devices; infrared detectors ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2009-12-10 US disclosed
EP-2088151-A1 GOLD COMPLEX, METHOD FOR PRODUCTION OF THE GOLD COMPLEX, AND ORGANIC ULTRAVIOLET ELECTROLUMINESCENT ELEMENT USING THE GOLD COMPLEX Ube Industries, Ltd. (JP) 2009-08-12 EP disclosed
US-20090112009-A1 AMORPHOUS GE/TE DEPOSITION PROCESS ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2009-04-30 US disclosed