SCHEMBL4579558

SCHEMBL4579558

CCC(C)(C)N[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL156987 0.69 TSHR (0.43)
SCHEMBL29092777 0.69
SCHEMBL29090350 0.67
SCHEMBL178403 0.67
SCHEMBL17102757 0.65 TSHR (0.32)
SCHEMBL18992158 0.65
SCHEMBL16405949 0.65 TSHR (0.32)
Hydrochloric Acid SCHEMBL28173373 0.65
SCHEMBL3829916 0.64
SCHEMBL16148510 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118355473-A Conformal carbon-doped silicon nitride films and methods thereof 朗姆研究公司 2024-07-16 CN disclosed
CN-117121173-A Integration of fully aligned vias by selective deposition and resistivity reduction 朗姆研究公司 2023-11-24 CN disclosed
US-7361722-B2 Methods of making high fluorine content fluoro-silicone copolymers MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2008-04-22 US disclosed
WO-2007002072-A1 FLUORO-SILICONE COPOLYMERS MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2007-01-04 WO disclosed
WO-2007002767-A1 METHODS OF MAKING HIGH FLUORINE CONTENT FLUORO-SILICONE COPOLYMERS MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2007-01-04 WO disclosed
US-20060293483-A1 Fluoro-silicone copolymers GENERAL ELECTRIC CO,MPMANY 2006-12-28 US disclosed
US-20060293479-A1 Methods of making high fluorine content fluoro-silicone copolymers GENERAL ELECTRIC COMPANY 2006-12-28 US disclosed
US-20050181607-A1 Method of manufacturing a semiconductor device KABUSHIKI KAISHA TOSHIBA (JP) 2005-08-18 US disclosed
US-6909156-B2 Semiconductor device and manufacturing method therefor ABUSHIKI KAISHA TOSHIBA (JP) 2005-06-21 US disclosed
US-20040188778-A1 Semiconductor device and manufacturing method therefor SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. (JP) 2004-09-30 US disclosed
EP-0112434-A2 Hydrogen bearing silyl carbamates UNION CARBIDE CORPORATION (US) 1984-07-04 EP disclosed
US-4400526-A Hydrogen bearing silyl carbamates UNION CARBIDE CORPORATION (US) 1983-08-23 US disclosed