SCHEMBL458694

SCHEMBL458694

[Cd+2].[In+3].[O-2].[O-2].[O-2].[O-2].[Sb+3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL198051 0.87
SCHEMBL29407977 0.87
SCHEMBL1717321 0.87
SCHEMBL19272480 0.87
Zinc Ion SCHEMBL21680905 0.75
SCHEMBL16348631 0.75
SCHEMBL36827 0.75
SCHEMBL18965 0.71
SCHEMBL21144337 0.71
SCHEMBL302281 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10620504-B2 Color-converting structures and light-emitting structures and visual displays made therewith VerLASE TECHNOLOGIES LLC (US) 2020-04-14 US disclosed
US-20190284473-A1 Color-Converting Structures and Light-Emitting Structures and Visual Displays Made Therewith VerLASE TECHNOLOGIES LLC (US) 2019-09-19 US disclosed
US-9525150-B2 Optoelectronic devices made using layers detached from inherently lamellar semiconductor donors VerLASE TECHNOLOGIES LLC (US) 2016-12-20 US disclosed
US-20160126484-A1 Optoelectronic Devices Made Using Layers Detached From Inherently Lamellar Semiconductor Donors VerLASE TECHNOLOGIES LLC 2016-05-05 US disclosed
US-9269854-B2 Methods of fabricating optoelectronic devices using layers detached from semiconductor donors and devices made thereby VerLASE TECHNOLOGIES LLC (US) 2016-02-23 US disclosed
EP-2614518-A1 METHODS OF FABRICATING OPTOELECTRONIC DEVICES USING LAYERS DETACHED FROM SEMICONDUCTOR DONORS AND DEVICES MADE THEREBY Verlase Technologies LLC (US) 2013-07-17 EP disclosed
US-20130143336-A1 Methods of Fabricating Optoelectronic Devices Using Layers Detached from Semiconductor Donors and Devices Made Thereby VerLASE TECHNOLOGIES LLC (US) 2013-06-06 US disclosed
WO-2012033551-A1 METHODS OF FABRICATING OPTOELECTRONIC DEVICES USING LAYERS DETACHED FROM SEMICONDUCTOR DONORS AND DEVICES MADE THEREBY VERSATILIS LLC (US) 2012-03-15 WO disclosed
EP-2389683-A2 METHODS OF ENHANCING PERFORMANCE OF FIELD-EFFECT TRANSISTORS AND FIELD-EFFECT TRANSISTORS MADE THEREBY Versatilis LLC (US) 2011-11-30 EP disclosed
US-20110252778-A1 HYDRAULIC SYSTEM DEERE & COMPANY 2011-10-20 US disclosed
US-7879678-B2 Methods of enhancing performance of field-effect transistors and field-effect transistors made thereby VERSATILIS LLC (US) 2011-02-01 US disclosed
WO-2010085304-A2 METHODS OF ENHANCING PERFORMANCE OF FIELD-EFFECT TRANSISTORS AND FIELD-EFFECT TRANSISTORS MADE THEREBY VERSATILIS LLC (US) 2010-07-29 WO disclosed
US-20090218605-A1 Methods of Enhancing Performance of Field-Effect Transistors and Field-Effect Transistors Made Thereby VERSATILIS LLC (US) 2009-09-03 US disclosed