Acetic Acid

Acetic Acid

SCHEMBL460076

C=CCOCC=C.CC(=O)O.OCCO

nearest known ligand 0.35

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Known targets — ChEMBL curated mechanism

ADRA2AADRA2BADRA2CADRB2AGTR1AVPR1AAVPR1BAVPR2BDKRB2CALCRCHRNA3CHRNB4ESR1ESR2GHSRGNRHRGSC1HSPA8MALT1MC1RMC4RNOS1NOS2NOS3OPRK1OXTRRAMP1RAMP2RAMP3SCN5ASSTR1SSTR2SSTR3SSTR4SSTR5dacAdacBdacCfolPftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO

The experimentally established mechanism targets of Acetic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.35
CA1 P00915 2/20 0.34
CA2 P00918 2/20 0.34
MEN1 O00255 1/20 0.34
POLB P06746 1/20 0.34
KMT2A Q03164 1/20 0.34
CA7 P43166 1/20 0.34
TSHR P16473 3/20 0.34
ALDH1A1 P00352 2/20 0.33
FFAR3 O14843 1/20 0.33
LCK P06239 1/20 0.33
FYN P06241 1/20 0.33
CYP3A4 P08684 1/20 0.32
CA9 Q16790 1/20 0.31
MAPT P10636 1/20 0.31
CACNA1B Q00975 1/20 0.31
APBA1 Q02410 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Acetic Acid SCHEMBL28108198 1.00 TDP1 (0.35) TDP1CA1CA2MEN1POLB
Acetic Acid SCHEMBL131569 0.93 FFAR3 (0.39) TDP1CA1CA2MEN1POLB
Acetic Acid SCHEMBL27627871 0.93 FFAR3 (0.39) TDP1CA1CA2MEN1POLB
1,3-Propanediol SCHEMBL7760174 0.91 TSHR (0.36) TDP1CA1CA2MEN1POLB
Bicarbonate SCHEMBL10456880 0.90 CA1 (0.37) TDP1CA1CA2MEN1POLB
Acetic Acid SCHEMBL667791 0.90 TDP1 (0.37) TDP1CA1CA2MEN1POLB
Acetic Acid SCHEMBL8953871 0.90 TDP1 (0.37) TDP1CA1CA2MEN1POLB
Thioglycolic Acid SCHEMBL27627424 0.90 TDP1 (0.31) TDP1CA1CA2TSHRCA9
Acetic Acid SCHEMBL4119712 0.86 MEN1 (0.41) TDP1CA1CA2MEN1POLB
Propionic Acid SCHEMBL1903683 0.86 FFAR3 (0.43) TDP1CA1CA2MEN1POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1554 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118344845-A Surface treatment method and composition for use in the method 富士胶片电子材料美国有限公司 2024-07-16 CN claimed
CN-117908329-A KrF positive photoresist and preparation method thereof 瑞红(苏州)电子化学品股份有限公司 2024-04-19 CN claimed
US-11920069-B2 Compositions containing semiconducting nanoparticles, and polymer or composite layers formed therefrom, and optical devices MERCK PATENT GMBH (DE) 2024-03-05 US claimed
US-20230343582-A1 SPIN ON CARBON COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-10-26 US claimed
US-11772041-B2 Composite amine absorbent, and device and method for removing CO2 or H2S, or both of CO2 and H2S MITSUBISHI HEAVY INDUSTRIES, LTD. (JP) 2023-10-03 US claimed
US-11746284-B2 Composition comprising a semiconducting light emitting nanoparticle MERCK PATENT GMBH (DE) 2023-09-05 US claimed
CN-111752103-B Red photosensitive resin composition and color filter comprising same 东友精细化工有限公司 2023-08-25 CN claimed
US-11728161-B2 Spin on carbon composition and method of manufacturing a semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-08-15 US claimed
CN-110799623-B Composition comprising semiconductor luminescent nanoparticles 默克专利股份有限公司 2023-06-27 CN claimed
EP-3635069-B1 A COMPOSITION COMPRISING SEMICONDUCTING LIGHT-EMITTING NANOPARTICLES HAVING THIOL FUNCTIONAL SURFACE LIGANDS MERCK PATENT GMBH (DE) 2023-06-07 EP claimed
US-20090042127-A1 PHOTORESIST COMPOSITION AND METHOD OF FORMING A PHOTORESIST PATTERN USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-02-12 US claimed
US-20080254634-A1 Photoresist composition and method of manufacturing a thin-film transistor substrate using the same SAMSUNG ELECTRONICS CO., LTD. 2008-10-16 US claimed
US-20060281624-A1 Mixed dispersants containing paste composition and display device including the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-12-14 US claimed
EP-0855620-B1 Positive photoresist composition JSR CORP (JP) 2002-09-11 EP claimed
US-6319649-B1 CAN FORM PATTERN WITH HIGH SENSITIVITY, RESOLUTION ABILITY AND STABILITY, ACCURACY HITACHI, LTD. (JP) 2001-11-20 US claimed
US-5942369-A ALKALI-SOLUBLE NOVOLAK RESIN; ALKALI SOLUBLE ACRYLIC RESIN OF RADICAL-POLYMERIZABLE UNITS CONTAINING A: HYDROXYL GROUP, CARBOXYL GROUP, OR PHENOLIC HYDROXYL GROUP; QUINONEDIAZIDE AND SOLVENT; THICK FILMS AS BUMP FORMING MATERIALS JSR CORPORATION (JP) 1999-08-24 US claimed
EP-0923112-A1 DETERGENT FOR LITHOGRAPHY Clariant International Ltd. (CH) 1999-06-16 EP claimed
EP-0855620-A1 Positive photoresist composition JSR Corporation (JP) 1998-07-29 EP claimed
EP-0594452-B1 Radiation sensitive resin composition for microlens JAPAN SYNTHETIC RUBBER CO LTD (JP) 1997-01-15 EP claimed
EP-0594452-A2 Radiation sensitive resin composition for microlens JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1994-04-27 EP claimed