⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL109901 | 1.00 | — | — | |
| SCHEMBL28594700 | 0.82 | — | — | |
| SCHEMBL4989983 | 0.82 | — | — | |
| SCHEMBL29007482 | 0.82 | — | — | |
| SCHEMBL31619573 | 0.82 | — | — | |
| SCHEMBL28525490 | 0.82 | — | — | |
| SCHEMBL31619572 | 0.82 | — | — | |
| SCHEMBL7715547 | 0.82 | — | — | |
| SCHEMBL791227 | 0.82 | — | — | |
| SCHEMBL28761104 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1625589-A4 | MAGNETOELECTRONICS INFORMATION DEVICE HAVING A COMPOUND MAGNETIC FREE LAYER | FREESCALE SEMICONDUCTOR INC (US) | 2007-01-03 | — | — | EP | claimed |
| EP-1625589-A2 | MAGNETOELECTRONICS INFORMATION DEVICE HAVING A COMPOUND MAGNETIC FREE LAYER | Freescale Semiconductor, Inc. (US) | 2006-02-15 | — | — | EP | claimed |
| US-6956763-B2 | MRAM element and methods for writing the MRAM element | FREESCALE SEMICONDUCTOR, INC. (US) | 2005-10-18 | — | — | US | claimed |
| WO-2005006338-A2 | MAGNETOELECTRONICS INFORMATION DEVICE HAVING A COMPOUND MAGNETIC FREE LAYER | FREESCALE SEMICONDUCTOR, INC. (US) | 2005-01-20 | — | — | WO | claimed |
| US-20040264238-A1 | MRAM element and methods for writing the MRAM element | FREESCALE SEMICONDUCTOR, INC. | 2004-12-30 | — | — | US | claimed |
| US-6714446-B1 | Magnetoelectronics information device having a compound magnetic free layer | MOTOROLA, INC. | 2004-03-30 | — | — | US | claimed |
| EP-1625589-B1 | MAGNETOELECTRONICS INFORMATION DEVICE HAVING A COMPOUND MAGNETIC FREE LAYER | FREESCALE SEMICONDUCTOR INC (US) | 2008-04-23 | — | — | EP | disclosed |
| EP-1625589-A4 | MAGNETOELECTRONICS INFORMATION DEVICE HAVING A COMPOUND MAGNETIC FREE LAYER | FREESCALE SEMICONDUCTOR INC (US) | 2007-01-03 | — | — | EP | disclosed |
| EP-1625589-A2 | MAGNETOELECTRONICS INFORMATION DEVICE HAVING A COMPOUND MAGNETIC FREE LAYER | Freescale Semiconductor, Inc. (US) | 2006-02-15 | — | — | EP | disclosed |
| US-6909631-B2 | MRAM and methods for reading the MRAM | FREESCALE SEMICONDUCTOR, INC. (US) | 2005-06-21 | — | — | US | disclosed |
| WO-2005043547-A1 | MRAM AND METHODS FOR READING THE MRAM | FREESCALE SEMICONDUCTOR, INC. (US) | 2005-05-12 | — | — | WO | disclosed |
| WO-2005006338-A2 | MAGNETOELECTRONICS INFORMATION DEVICE HAVING A COMPOUND MAGNETIC FREE LAYER | FREESCALE SEMICONDUCTOR, INC. (US) | 2005-01-20 | — | — | WO | disclosed |
| US-20040125649-A1 | MRAM and methods for reading the MRAM | FREESCALE SEMICONDUCTOR, INC. | 2004-07-01 | — | — | US | disclosed |
| US-6714446-B1 | Magnetoelectronics information device having a compound magnetic free layer | MOTOROLA, INC. | 2004-03-30 | — | — | US | disclosed |