SCHEMBL4623261

SCHEMBL4623261

[PbH2].[Ta].[Zr]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL157416 0.82
SCHEMBL2590811 0.82
SCHEMBL3904999 0.82
SCHEMBL295701 0.82
SCHEMBL18488861 0.67
Water SCHEMBL8926378 0.67
SCHEMBL1658208 0.67
SCHEMBL10937772 0.67
SCHEMBL6694153 0.67
Water SCHEMBL7915305 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1383162-B1 Deposition method of dielectric layer SAMSUNG ELECTRONICS CO LTD (KR) 2008-01-02 EP claimed
CN-100356518-C Deposition method for dielectric layer SAMSUNG ELECTRONICS CO LTD (KR) 2007-12-19 CN claimed
US-6911402-B2 Deposition method of a dielectric layer SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-06-28 US claimed
US-20040018747-A1 Deposition method of a dielectric layer SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-01-29 US claimed
EP-1383162-A2 Deposition method of dielectric layer Samsung Electronics Co., Ltd. (KR) 2004-01-21 EP claimed
CN-1469439-A Deposition method for dielectric layer ���ǵ�����ʽ���� 2004-01-21 CN claimed
US-20190036017-A1 MAGNETIC SWITCHING MATERIALS AND PREPARATION THEREOF BOARD OF SUPERVISORS OF LOUISIANA STATE UNIVERSITY AND AGRICULTURAL AND MECHANICAL COLLEGE (US) 2019-01-31 US disclosed
EP-1383162-B1 Deposition method of dielectric layer SAMSUNG ELECTRONICS CO LTD (KR) 2008-01-02 EP disclosed
CN-100356518-C Deposition method for dielectric layer SAMSUNG ELECTRONICS CO LTD (KR) 2007-12-19 CN disclosed
US-6911402-B2 Deposition method of a dielectric layer SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-06-28 US disclosed
US-20040018747-A1 Deposition method of a dielectric layer SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-01-29 US disclosed
EP-1383162-A2 Deposition method of dielectric layer Samsung Electronics Co., Ltd. (KR) 2004-01-21 EP disclosed
CN-1469439-A Deposition method for dielectric layer ���ǵ�����ʽ���� 2004-01-21 CN disclosed