SCHEMBL464602

SCHEMBL464602

[BiH3].[La]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28313431 0.82
SCHEMBL27809105 0.82
SCHEMBL27731298 0.82
SCHEMBL15170817 0.82
SCHEMBL28615285 0.82
SCHEMBL2182700 0.82
SCHEMBL18246701 0.82
SCHEMBL13370250 0.82
SCHEMBL22607460 0.82
SCHEMBL28040559 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 249 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12536421-B2 Neural network RYUKOKU UNIVERSITY (JP) 2026-01-27 US claimed
CN-119463728-A Solar cell packaging adhesive film and preparation method thereof 华能(嘉峪关)新能源有限公司 2025-02-18 CN claimed
CN-118666308-B Lanthanum-bismuth doped tin oxide near infrared reflecting nano powder and preparation method thereof 畅的新材料科技(上海)有限公司 2024-11-26 CN claimed
CN-118666308-A Lanthanum-bismuth doped tin oxide near infrared reflecting nano powder and preparation method thereof 畅的新材料科技(上海)有限公司 2024-09-20 CN claimed
CN-117936860-A Bismuth lanthanum co-doped intermediate-temperature SOFC cathode material and preparation method and application thereof 成都岷山绿氢能源有限公司 2024-04-26 CN claimed
CN-117602936-A Potassium sodium niobate-lanthanum bismuthate-sodium niobate-based energy storage ceramic material and preparation method thereof 四川大学 2024-02-27 CN claimed
US-11751400-B2 Embedded ferroelectric memory in high-k first technology TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-09-05 US claimed
CN-116387941-A PDE terahertz emission source and emission method 电子科技大学 2023-07-04 CN claimed
US-RE49563-E1 Negative capacitance fet device with reduced hysteresis window SAMSUNG ELECTRONICS CO., LTD. 2023-06-27 US claimed
CN-115802871-A Magneton spin torque device, storage structure and electronic equipment 清华大学 2023-03-14 CN claimed
US-8608289-B2 Liquid ejecting head, liquid ejecting apparatus, and piezoelectric element SEIKO EPSON CORPORATION (JP) 2013-12-17 US claimed
EP-2364851-B1 Liquid ejecting head, liquid ejecting apparatus, and piezoelectric element SEIKO EPSON CORP (JP) 2013-03-06 EP claimed
CN-102248793-A Piezoelectric element, liquid ejection head, piezoelectric actuator and liquid ejecting apparatus SEIKO EPSON CORP 2011-11-23 CN claimed
US-20110228014-A1 PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS SEIKO EPSON CORPORATION (JP) 2011-09-22 US claimed
US-20110221833-A1 LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, AND PIEZOELECTRIC ELEMENT SEIKO EPSON CORPORATION (JP) 2011-09-15 US claimed
EP-2364851-A1 Liquid ejecting head, liquid ejecting apparatus, and piezoelectric element Seiko Epson Corporation (JP) 2011-09-14 EP claimed
US-20110018357-A1 Self powered mili, micro, and nano electronic chips JAY ERIC 2011-01-27 US claimed
US-20010053740-A1 Bismuth lanthanum titanate (BLT), BLT thin film, and electronic device including the BLT thin film SAMSUNG ELECTRONICS CO., LTD. (KR) 2001-12-20 US claimed
US-6274195-B1 VAPORIZING ZIRCONIUM OR TITANIUM COMPLEX TOGETHER WITH ORGANOMETALLIC PRECURSORS AND BRINGING VAPOR INTO CONTACT WITH HEATED SUBSTRATE TO DEPOSIT METAL OXIDE FILM ON SUBSTRATE POSTECH FOUNDATION (KR) 2001-08-14 US claimed
US-4311487-A Recrystallization of activated rare-earth oxyhalide phosphors EASTMAN KODAK COMPANY (US) 1982-01-19 US claimed