SCHEMBL467815

SCHEMBL467815

CO[SiH](CF)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Propane SCHEMBL28140822 0.93
SCHEMBL27966002 0.74
SCHEMBL10787607 0.72
SCHEMBL12898467 0.67
SCHEMBL3404310 0.65
SCHEMBL329798 0.64
SCHEMBL467781 0.61
SCHEMBL467604 0.61
SCHEMBL467723 0.61
SCHEMBL12006888 0.61

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240318001-A1 Thick Film Low Refractive Index Polysiloxane Claddings OPTITUNE OY (FI) 2024-09-26 US claimed
EP-4370588-A1 THICK FILM LOW REFRACTIVE INDEX POLYSILOXANE CLADDINGS Optitune Oy (FI) 2024-05-22 EP claimed
CN-117777454-A UV resin, cross-linking agent, UV adhesive and preparation method thereof 南方科技大学嘉兴研究院 2024-03-29 CN claimed
WO-2023285739-A1 THICK FILM LOW REFRACTIVE INDEX POLYSILOXANE CLADDINGS OPTITUNE OY (FI) 2023-01-19 WO claimed
US-20240318001-A1 Thick Film Low Refractive Index Polysiloxane Claddings OPTITUNE OY (FI) 2024-09-26 US disclosed
EP-4370588-A1 THICK FILM LOW REFRACTIVE INDEX POLYSILOXANE CLADDINGS Optitune Oy (FI) 2024-05-22 EP disclosed
CN-117777454-A UV resin, cross-linking agent, UV adhesive and preparation method thereof 南方科技大学嘉兴研究院 2024-03-29 CN disclosed
CN-117777454-A UV resin, cross-linking agent, UV adhesive and preparation method thereof 南方科技大学嘉兴研究院 2024-03-29 CN disclosed
WO-2023285739-A1 THICK FILM LOW REFRACTIVE INDEX POLYSILOXANE CLADDINGS OPTITUNE OY (FI) 2023-01-19 WO disclosed
CN-110461856-B Method for producing alkoxyhydrosilane and method for producing alkoxyhalosilane 株式会社钟化 2023-01-10 CN disclosed
CN-108139671-B Photosensitive resin composition and cured film prepared therefrom 罗门哈斯电子材料韩国有限公司 2022-02-11 CN disclosed
US-10890846-B2 Photosensitive resin composition and cured film prepared therefrom ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD (KR) 2021-01-12 US disclosed
CN-102037000-A Process for producing alpha-hetero-substituted alkylhalohydrosilanes and use thereof KANEKA CORP 2011-04-27 CN disclosed
EP-2308884-A1 METHOD FOR PRODUCING -HETERO-SUBSTITUTED ALKYLHALOHYDROSILANE AND USE THEREOF Kaneka Corporation (JP) 2011-04-13 EP disclosed
US-6420269-B2 USEFUL IN PRODUCING SEMICONDUCTOR CHIPS HITACHI CHEMICAL COMPANY, LTD. (JP) 2002-07-16 US disclosed
CN-1069675-C Silica-based isolation film, material for manufacturing same, and process for producing same HITACHI CHEMICAL CO LTD (JP) 2001-08-15 CN disclosed
US-6000339-A Material for forming silica-base coated insulation film, process for producing the material, silica-base insulation film, semiconductor device, and process for producing the device HITACHI CHEMICAL COMPANY, LTD. (JP) 1999-12-14 US disclosed
EP-0820092-A1 CERIUM OXIDE ABRASIVE, SEMICONDUCTOR CHIP, SEMICONDUCTOR DEVICE, PROCESS FOR THE PRODUCTION OF THEM, AND METHOD FOR THE POLISHING OF SUBSTRATES HITACHI CHEMICAL CO., LTD. (JP) 1998-01-21 EP disclosed
CN-1151752-A Material for forming silica-base coated insulation film, process for producing the material, silica-base insulation film, semiconductor device, and process for producing the device HITACHI CHEMICAL CO LTD (JP) 1997-06-11 CN disclosed
EP-0768352-A1 MATERIAL FOR FORMING SILICA-BASE COATED INSULATION FILM, PROCESS FOR PRODUCING THE MATERIAL, SILICA-BASE INSULATION FILM, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING THE DEVICE HITACHI CHEMICAL CO., LTD. (JP) 1997-04-16 EP disclosed