Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | IDO1 | P14902 | 1/20 | 0.53 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.53 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.53 |
| ▸ | HPGD | P15428 | 2/20 | 0.53 |
| ▸ | MYC | P01106 | 1/20 | 0.49 |
| ▸ | MAPT | P10636 | 3/20 | 0.47 |
| ▸ | CA12 | O43570 | 2/20 | 0.47 |
| ▸ | CA1 | P00915 | 2/20 | 0.47 |
| ▸ | CA4 | P22748 | 2/20 | 0.47 |
| ▸ | CA5A | P35218 | 2/20 | 0.47 |
| ▸ | CA7 | P43166 | 2/20 | 0.47 |
| ▸ | CA9 | Q16790 | 2/20 | 0.47 |
| ▸ | CA14 | Q9ULX7 | 2/20 | 0.47 |
| ▸ | CA5B | Q9Y2D0 | 2/20 | 0.47 |
| ▸ | CA2 | P00918 | 1/20 | 0.47 |
| ▸ | GFER | P55789 | 1/20 | 0.47 |
| ▸ | NGLY1 | Q96IV0 | 1/20 | 0.47 |
| ▸ | TSHR | P16473 | 2/20 | 0.47 |
| ▸ | TP53 | P04637 | 1/20 | 0.47 |
| ▸ | GAA | P10253 | 1/20 | 0.47 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12861298 | 0.85 | GAA (0.47) | IDO1ALDH1A1KDM4EHPGDMYC | |
| SCHEMBL472304 | 0.80 | ABCC1 (0.54) | IDO1ALDH1A1KDM4EHPGDMYC | |
| SCHEMBL69178 | 0.79 | IDO1 (0.71) | IDO1ALDH1A1KDM4EHPGDMYC | |
| SCHEMBL29373760 | 0.79 | IDO1 (0.71) | IDO1ALDH1A1KDM4EHPGDMYC | |
| Trimethylammonium SCHEMBL10817172 | 0.77 | GRIN2D (0.58) | IDO1ALDH1A1KDM4EHPGDMYC | |
| Hydrochloric Acid SCHEMBL28770512 | 0.77 | IDO1 (0.68) | IDO1ALDH1A1KDM4EHPGDMYC | |
| Hydrochloric Acid SCHEMBL1958555 | 0.77 | IDO1 (0.68) | IDO1ALDH1A1KDM4EHPGDMYC | |
| SCHEMBL12983974 | 0.77 | IDO1 (0.68) | IDO1ALDH1A1KDM4EHPGDMYC | |
| SCHEMBL341894 | 0.77 | IDO1 (0.49) | IDO1ALDH1A1KDM4EHPGDMYC | |
| SCHEMBL9340104 | 0.76 | GAA (0.52) | ALDH1A1KDM4EMAPTTSHRTP53 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 100 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2492746-B1 | Chemically amplified negative resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2019-11-20 | — | — | EP | disclosed |
| CN-105607426-B | Polymer, chemical amplification negative resist composition and pattern forming method | SHIN ETSU CHEMICAL COMPANY (JP) | 2019-11-01 | — | — | CN | disclosed |
| EP-2492747-B1 | Chemically amplified negative resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2018-11-07 | — | — | EP | disclosed |
| CN-104330955-B | For the chemical-amplification positive anti-corrosion agent composition and patterning method of EB or EUV lithographic printings | 信越化学工业株式会社 | 2018-05-25 | — | — | CN | disclosed |
| US-RE46765-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-27 | — | — | US | disclosed |
| CN-104199255-B | Chemistry amplification negative resist composition and patterning method for EB or EUV lithographic printings | 信越化学工业株式会社 | 2018-03-13 | — | — | CN | disclosed |
| US-RE46736-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| EP-2360527-B1 | Patterning process using EB or EUV lithography | SHINETSU CHEMICAL CO (JP) | 2017-08-23 | — | — | EP | disclosed |
| EP-2360525-B1 | Chemically amplified positive resist composition and pattern forming process | SHINETSU CHEMICAL CO (JP) | 2017-08-23 | — | — | EP | disclosed |
| EP-2360526-B1 | Chemically amplified negative resist composition for E beam or EUV lithography and patterning process | SHINETSU CHEMICAL CO (JP) | 2017-08-16 | — | — | EP | disclosed |
| CN-101982808-A | Chemically amplified resist compositon and pattern forming process | SHINETSU CHEMICAL CO | 2011-03-02 | — | — | CN | disclosed |
| CN-101943864-A | Positive resist composition and patterning process | SHINETSU CHEMICAL CO | 2011-01-12 | — | — | CN | disclosed |
| EP-2264525-A2 | Chemically amplified positive photoresist composition and pattern forming process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-12-22 | — | — | EP | disclosed |
| US-20100316955-A1 | CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-12-16 | — | — | US | disclosed |
| US-20100304302-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-12-02 | — | — | US | disclosed |
| EP-2256551-A1 | Chemically amplified resist compositon and pattern forming process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-12-01 | — | — | EP | disclosed |
| CN-101900939-A | Negative resist composition and patterning process using the same | SHINETSU CHEMICAL CO | 2010-12-01 | — | — | CN | disclosed |
| CN-101893824-A | Negative resist composition, patterning process, and testing process and preparation process of negative resist composition | SHINETSU CHEMICAL CO | 2010-11-24 | — | — | CN | disclosed |
| CN-101762981-A | Chemically amplified positive resist composition and resist patterning process | SHINETSU CHEMICAL CO | 2010-06-30 | — | — | CN | disclosed |
| CN-101625524-A | Photoresist composition and pattern forming method | SHINETSU CHEMICAL CO | 2010-01-13 | — | — | CN | disclosed |