SCHEMBL47517

SCHEMBL47517

CCC(C)(C)C(=O)OC(C)C(=O)OC1C2CC3C(=O)OC1C3C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13609135 0.87
SCHEMBL13088271 0.86 HMGCR (0.35)
SCHEMBL47485 0.86 HMGCR (0.35)
SCHEMBL16810007 0.86 HMGCR (0.35)
SCHEMBL13893167 0.86 HMGCR (0.35)
SCHEMBL13609129 0.85
SCHEMBL15745518 0.85
SCHEMBL13015801 0.83 HMGCR (0.30)
SCHEMBL47522 0.83
SCHEMBL47487 0.81 HMGCR (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 266 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11803122-B2 Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-31 US disclosed
US-20230273521-A1 CHEMICALLY AMPLIFIED PHOTOSENTIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-08-31 US disclosed
US-20230229084-A1 CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-20 US disclosed
US-9977328-B2 Chemically amplified positive-type photosensitive resin composition for thick film TOKYO OHKA KOGYO CO., LTD. (JP) 2018-05-22 US disclosed
US-20180120708-A1 RINSING LIQUID, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-20180120706-A1 PATTERN FORMING METHOD, LAMINATE, AND RESIST COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-9885956-B2 Pattern forming method, and, electronic device producing method and electronic device, each using the same FUJIFILM CORPORATION (JP) 2018-02-06 US disclosed
US-20170322490-A1 PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT FUJIFILM CORPORATION (JP) 2017-11-09 US disclosed
US-9810981-B2 Pattern formation method, etching method, electronic device manufacturing method, and electronic device FUJIFILM CORPORATION (JP) 2017-11-07 US disclosed
US-20170315444-A1 CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2017-11-02 US disclosed
US-20110117499-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-19 US disclosed
US-20110117491-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-19 US disclosed
US-20110111343-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-12 US disclosed
US-20110097667-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-04-28 US disclosed
US-20110039207-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-02-17 US disclosed
US-20110008728-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-01-13 US disclosed
US-20100248143-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed
US-20100183975-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND RESIN FUJIFILM CORPORATION (JP) 2010-07-22 US disclosed
US-7592126-B2 Positive resist composition and pattern forming method using the resist composition FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-7435527-B2 Mixture of acid generator and resin insoluble in alkaline developer and another acid decomposable compound FUJIFILM CORPORATION (JP) 2008-10-14 US disclosed