SCHEMBL4755782

SCHEMBL4755782

CO[Si](CC(F)C(F)C(F)C(F)C(F)C(F)C(F)C(F)C(F)F)(OC)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20378710 1.00
SCHEMBL20378718 0.98
SCHEMBL229538 0.84
SCHEMBL6419729 0.82
SCHEMBL105708 0.80
SCHEMBL25335827 0.80
SCHEMBL20378698 0.80
SCHEMBL28883991 0.80
SCHEMBL22529328 0.78
Alcohol SCHEMBL28672855 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-113384919-A Stress-induced surface wettability continuous-transition Janus composite film and preparation method and application thereof 安徽理工大学 2021-09-14 CN claimed
WO-2023145102-A1 ZINC OXIDE POWDER, LIQUID DISPERSION, COATING MATERIAL, AND COSMETIC 住友大阪セメント株式会社 2023-08-03 WO disclosed
WO-2022114179-A1 ZINC OXIDE POWDER, DISPERSION LIQUID, COATING MATERIAL, AND COSMETIC 住友大阪セメント株式会社 2022-06-02 WO disclosed
CN-113384919-A Stress-induced surface wettability continuous-transition Janus composite film and preparation method and application thereof 安徽理工大学 2021-09-14 CN disclosed
CN-213716916-U Photovoltaic cell packaging layer and photovoltaic cell assembly 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) 2021-07-16 CN disclosed
WO-2021095770-A1 ANTIGLARE LAYER-PROVIDED SUBSTRATE, IMAGE DISPLAY APPARATUS, AND ANTIGLARE LAYER-PROVIDED SUBSTRATE MANUFACTURING METHOD 日産化学株式会社 2021-05-20 WO disclosed
JP-2008104936-A WATER SUPERREPELLENT ALUMINUM FOIL AND METHOD OF MANUFACTURING THE SAME NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 2008-05-08 JP disclosed