⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9722061 | 0.84 | — | — | |
| SCHEMBL15254049 | 0.80 | — | — | |
| SCHEMBL9318072 | 0.79 | — | — | |
| SCHEMBL4944057 | 0.78 | — | — | |
| SCHEMBL5611269 | 0.78 | — | — | |
| SCHEMBL7930116 | 0.78 | — | — | |
| SCHEMBL7930112 | 0.78 | — | — | |
| SCHEMBL7120876 | 0.77 | — | — | |
| SCHEMBL9317879 | 0.77 | — | — | |
| SCHEMBL845419 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113820920-B | Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device | 旭化成株式会社 | 2023-07-04 | — | — | CN | disclosed |
| CN-110088680-B | Double-layer photosensitive layer roll | 旭化成株式会社 | 2022-12-30 | — | — | CN | disclosed |
| CN-115185157-A | Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device | 旭化成株式会社 | 2022-10-14 | — | — | CN | disclosed |
| CN-109153841-B | Resin composition | 东丽株式会社 | 2021-12-31 | — | — | CN | disclosed |
| CN-113820920-A | Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device | 旭化成株式会社 | 2021-12-21 | — | — | CN | disclosed |
| CN-107850844-B | Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device | 旭化成株式会社 | 2021-09-07 | — | — | CN | disclosed |
| US-9846360-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-12-19 | — | — | US | disclosed |
| US-20170003590-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-05 | — | — | US | disclosed |
| US-9335632-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-10 | — | — | US | disclosed |
| US-9164392-B2 | Developer and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-20 | — | — | US | disclosed |
| US-9086625-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-21 | — | — | US | disclosed |
| US-20150064626-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-05 | — | — | US | disclosed |
| US-20140377706-A1 | DEVELOPER FOR PHOTOSENSITIVE RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-25 | — | — | US | disclosed |
| US-20140315131-A1 | DEVELOPER AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-10-23 | — | — | US | disclosed |
| US-20140065545-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-06 | — | — | US | disclosed |
| WO-2008140846-A1 | HIGH ETCH RESISTANT UNDERLAYER COMPOSITIONS FOR MULTILAYER LITHOGRAPHIC PROCESSES | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2008-11-20 | — | — | WO | disclosed |
| WO-2008103776-A2 | THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2008-08-28 | — | — | WO | disclosed |
| WO-2008098189-A1 | PHOTOSENSITIVE COMPOSITIONS EMPLOYING SILICON-CONTAINING ADDITIVES | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2008-08-14 | — | — | WO | disclosed |