⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL49646 | 0.62 | — | — | |
| SCHEMBL49720 | 0.62 | — | — | |
| SCHEMBL5925136 | 0.59 | — | — | |
| SCHEMBL1794632 | 0.59 | — | — | |
| Hydrochloric Acid SCHEMBL6065121 | 0.59 | — | — | |
| Water SCHEMBL23525631 | 0.59 | — | — | |
| SCHEMBL6700452 | 0.59 | — | — | |
| SCHEMBL189693 | 0.59 | — | — | |
| SCHEMBL20838448 | 0.59 | — | — | |
| Fluoride SCHEMBL1057439 | 0.59 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 61 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112442674-A | Method and apparatus for depositing chalcogenide films and structures including films | ASM IP私人控股有限公司 | 2021-03-05 | — | — | CN | claimed |
| US-20210066080-A1 | METHODS AND APPARATUS FOR DEPOSITING A CHALCOGENIDE FILM AND STRUCTURES INCLUDING THE FILM | ASM IP HOLDING B.V. (NL) | 2021-03-04 | — | — | US | claimed |
| US-9324606-B2 | Self-aligned repairing process for barrier layer | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2016-04-26 | — | — | US | claimed |
| US-20150194343-A1 | SELF-ALIGNED REPAIRING PROCESS FOR BARRIER LAYER | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2015-07-09 | — | — | US | claimed |
| US-20150179937-A1 | Metal Organic Chemical Vapor Deposition of Embedded Resistors for ReRAM Cells | INTERMOLECULAR INC. (US) | 2015-06-25 | — | — | US | claimed |
| US-20140175367-A1 | Materials for Thin Resisive Switching Layers of Re-RAM Cells | INTERMOLECULAR INC. (US) | 2014-06-26 | — | — | US | claimed |
| US-7459392-B2 | Noble metal barrier and seed layer for semiconductors | INTEL CORPORATION (US) | 2008-12-02 | — | — | US | claimed |
| US-20060220249-A1 | Nobel metal barrier and seed layer for semiconductors | INTEL CORPORATION | 2006-10-05 | — | — | US | claimed |
| CN-115584491-B | Organoaminopolysiloxanes for deposition of silicon-containing films | 弗萨姆材料美国有限责任公司 | 2024-11-08 | — | — | CN | disclosed |
| CN-118231149-A | Solid aluminum electrolytic capacitor and preparation method and application thereof | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | 2024-06-21 | — | — | CN | disclosed |
| CN-113168966-B | Solid electrolytic capacitor containing sequentially vapor deposited dielectric films | 京瓷AVX元器件公司 | 2024-01-16 | — | — | CN | disclosed |
| CN-116854727-A | Process for preparing metal dialkylamido halides, iminotris (dialkylamido) metal complexes and device system therefor | 天津绿菱气体有限公司 | 2023-10-10 | — | — | CN | disclosed |
| CN-116583621-A | Complexes of lanthanide and lanthanide-like transition metals | 默克专利股份有限公司 | 2023-08-11 | — | — | CN | disclosed |
| CN-108615703-B | Interconnect with fully clad wire | 太浩研究有限公司 | 2023-02-17 | — | — | CN | disclosed |
| US-20140175367-A1 | Materials for Thin Resisive Switching Layers of Re-RAM Cells | INTERMOLECULAR INC. (US) | 2014-06-26 | — | — | US | disclosed |
| US-20140175360-A1 | Bilayered Oxide Structures for ReRAM Cells | INTERMOLECULAR INC. (US) | 2014-06-26 | — | — | US | disclosed |
| US-20140175355-A1 | Carbon Doped Resistive Switching Layers | INTERMOLECULAR INC. (US) | 2014-06-26 | — | — | US | disclosed |
| US-8726838-B2 | Combinatorial plasma enhanced deposition and etch techniques | INTERMOLECULAR, INC. (US) | 2014-05-20 | — | — | US | disclosed |
| CN-102046839-B | Method for making oriented tantalum pentoxide films | MICRON TECHNOLOGY INC | 2013-06-26 | — | — | CN | disclosed |
| CN-102046839-A | Method for making oriented tantalum pentoxide films | MICRON TECHNOLOGY INC | 2011-05-04 | — | — | CN | disclosed |