⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL74895 | 0.97 | — | — | |
| SCHEMBL28282183 | 0.94 | — | — | |
| Ethane SCHEMBL31707415 | 0.94 | HSD17B10 (0.31) | — | |
| SCHEMBL4811732 | 0.94 | — | — | |
| SCHEMBL4810944 | 0.94 | — | — | |
| SCHEMBL25388028 | 0.94 | HSD17B10 (0.31) | — | |
| SCHEMBL4810651 | 0.94 | — | — | |
| Rubidium SCHEMBL4809347 | 0.94 | — | — | |
| Alcohol SCHEMBL27558825 | 0.91 | TSHR (0.35) | — | |
| Methylamine SCHEMBL14855897 | 0.91 | CA1 (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116830320-A | Surface modification method for high-nickel ternary cathode material and application thereof | 广东邦普循环科技有限公司 | 2023-09-29 | — | — | CN | claimed |
| CN-116830320-A | Surface modification method for high-nickel ternary cathode material and application thereof | 广东邦普循环科技有限公司 | 2023-09-29 | — | — | CN | disclosed |
| CN-108928823-B | silicon dioxide aerogel and normal pressure drying preparation method and application thereof | 中南大学 | 2020-01-31 | — | — | CN | disclosed |
| US-7332446-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-02-19 | — | — | US | disclosed |
| CN-1542071-A | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device | ��Խ��ѧ��ҵ��ʽ���� | 2004-11-03 | — | — | CN | disclosed |
| US-20040188809-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. | 2004-09-30 | — | — | US | disclosed |