SCHEMBL4818167

SCHEMBL4818167

CCCCCCC1CCC([Si](OC)(OC)OC)CC1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 5/20 0.41
HTT P42858 3/20 0.39
LMNA P02545 1/20 0.39
MAPK1 P28482 1/20 0.39
GAA P10253 1/20 0.38
MAPT P10636 1/20 0.38
MEN1 O00255 2/20 0.38
KMT2A Q03164 2/20 0.38
EPHX1 P07099 1/20 0.37
TP53 P04637 1/20 0.36
LSS P48449 2/20 0.36
PKM P14618 1/20 0.36
ALDH1A1 P00352 1/20 0.35
CYP2D6 P10635 1/20 0.34
CYP2C9 P11712 1/20 0.34
CYP2C19 P33261 1/20 0.34
TSHR P16473 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
NAAA Q02083 1/20 0.33
SPHK1 Q9NYA1 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1848320 0.79 CYP1A2 (0.59) CYP1A2HTTLMNAMAPK1MEN1
SCHEMBL3002424 0.79 CYP1A2 (0.59) CYP1A2HTTLMNAMAPK1MEN1
SCHEMBL1847927 0.79 CYP1A2 (0.59) CYP1A2HTTLMNAMAPK1MEN1
SCHEMBL6749100 0.79 CYP1A2 (0.59) CYP1A2HTTLMNAMAPK1MEN1
SCHEMBL6753110 0.79 CYP1A2 (0.59) CYP1A2HTTLMNAMAPK1MEN1
SCHEMBL5807045 0.79 CYP1A2 (0.59) CYP1A2HTTLMNAMAPK1MEN1
SCHEMBL6031279 0.79 CYP1A2 (0.59) CYP1A2HTTLMNAMAPK1MEN1
SCHEMBL997470 0.79 CYP1A2 (0.59) CYP1A2HTTLMNAMAPK1MEN1
SCHEMBL2048536 0.79
SCHEMBL10569325 0.79 CYP1A2 (0.59) CYP1A2HTTLMNAMAPK1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7341775-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD. (JP) 2008-03-11 US disclosed
EP-1580804-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILMS, PROCESS FOR PRODUCTION OF THE FILMS, INTERLAYER DIELECTRICS, AND SEMICONDUCTOR DEVICES MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-28 EP disclosed
US-20040235971-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-25 US disclosed