⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28180577 | 0.89 | — | — | |
| SCHEMBL168045 | 0.87 | — | — | |
| SCHEMBL29138645 | 0.82 | — | — | |
| SCHEMBL28069572 | 0.82 | — | — | |
| SCHEMBL15111014 | 0.82 | — | — | |
| SCHEMBL15106681 | 0.76 | — | — | |
| SCHEMBL11275289 | 0.75 | — | — | |
| SCHEMBL5713273 | 0.75 | — | — | |
| SCHEMBL203668 | 0.75 | — | — | |
| SCHEMBL6305499 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250087455-A1 | ETCHING METHOD AND PLASMA PROCESSING APPARATUS | TOKYO ELECTRON LIMITED (JP) | 2025-03-13 | — | — | US | claimed |
| US-20250087454-A1 | ETCHING METHOD AND PLASMA PROCESSING APPARATUS | TOKYO ELECTRON LIMITED (JP) | 2025-03-13 | — | — | US | claimed |
| CN-118888514-B | Preparation method of tungsten plug | 无锡邑文微电子科技股份有限公司 | 2025-01-07 | — | — | CN | claimed |
| CN-118888514-A | Preparation method of tungsten plug | 无锡邑文微电子科技股份有限公司 | 2024-11-01 | — | — | CN | claimed |
| WO-2024043139-A1 | ETCHING METHOD AND PLASMA PROCESSING APPARATUS | 東京エレクトロン株式会社 | 2024-02-29 | — | — | WO | claimed |
| CN-117238848-B | Contact hole structure and forming method thereof | 合肥晶合集成电路股份有限公司 | 2024-02-02 | — | — | CN | claimed |
| CN-117238848-A | Contact hole structure and forming method thereof | 合肥晶合集成电路股份有限公司 | 2023-12-15 | — | — | CN | claimed |
| WO-2023234214-A1 | ETCHING METHOD AND PLASMA PROCESSING DEVICE | 東京エレクトロン株式会社 | 2023-12-07 | — | — | WO | claimed |
| WO-2023233673-A1 | ETCHING METHOD AND PLASMA PROCESSING APPARATUS | 東京エレクトロン株式会社 | 2023-12-07 | — | — | WO | claimed |
| US-10861701-B2 | Semiconductor device and manufacturing method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-12-08 | — | — | US | claimed |
| US-20160380066-A1 | SEMICONDUCTOR DEVICE AND MANUFACUTRING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2016-12-29 | — | — | US | claimed |
| US-12588447-B2 | Etching method and plasma processing apparatus | TOKYO ELECTRON LIMITED (JP) | 2026-03-24 | — | — | US | disclosed |
| US-20250087455-A1 | ETCHING METHOD AND PLASMA PROCESSING APPARATUS | TOKYO ELECTRON LIMITED (JP) | 2025-03-13 | — | — | US | disclosed |
| US-20250087454-A1 | ETCHING METHOD AND PLASMA PROCESSING APPARATUS | TOKYO ELECTRON LIMITED (JP) | 2025-03-13 | — | — | US | disclosed |
| CN-119505544-A | High-strength tungsten-boron-silicon rubber radiation shielding material and preparation method thereof | 西安稀有金属材料研究院有限公司 | 2025-02-25 | — | — | CN | disclosed |
| US-6846516-B2 | Multiple precursor cyclical deposition system | APPLIED MATERIALS, INC. (US) | 2005-01-25 | — | — | US | disclosed |
| US-20050008779-A1 | Multiple precursor cyclical depositon system | APPLIED MATERIALS, INC. | 2005-01-13 | — | — | US | disclosed |
| US-20050008779-A1 | Multiple precursor cyclical depositon system | APPLIED MATERIALS, INC. | 2005-01-13 | — | — | US | disclosed |
| US-20030190423-A1 | Multiple precursor cyclical deposition system | APPLIED MATERIALS, INC. | 2003-10-09 | — | — | US | disclosed |
| US-20030190423-A1 | Multiple precursor cyclical deposition system | APPLIED MATERIALS, INC. | 2003-10-09 | — | — | US | disclosed |