⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4881450 | 1.00 | — | — | |
| Charcoal, Activated SCHEMBL6843951 | 0.87 | — | — | |
| SCHEMBL30928989 | 0.87 | — | — | |
| SCHEMBL49131 | 0.82 | — | — | |
| SCHEMBL965774 | 0.82 | — | — | |
| SCHEMBL3002881 | 0.82 | — | — | |
| SCHEMBL23710 | 0.82 | — | — | |
| SCHEMBL9278969 | 0.82 | — | — | |
| SCHEMBL1994989 | 0.82 | — | — | |
| SCHEMBL8685824 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111697051-B | Semiconductor structure and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2023-04-21 | — | — | CN | claimed |
| US-20250311375-A1 | GATE STACKS FOR STACK-FIN CHANNEL I/O DEVICES AND NANOWIRE CHANNEL CORE DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-10-02 | — | — | US | disclosed |
| US-12376363-B2 | Gate stacks for stack-fin channel I/O devices and nanowire channel core devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-07-29 | — | — | US | disclosed |
| CN-111697051-B | Semiconductor structure and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2023-04-21 | — | — | CN | disclosed |
| CN-113125005-A | Photoelectric sensing device and photoelectric system | 北海惠科光电技术有限公司 | 2021-07-16 | — | — | CN | disclosed |
| US-20080145978-A1 | DEPOSITION OF SILICON GERMANIUM NITROGEN PRECURSORS FOR STRAIN ENGINEERING | AIR LIQUIDE ELECTRONICS U.S. LP (US) | 2008-06-19 | — | — | US | disclosed |
| US-20080145978-A1 | DEPOSITION OF SILICON GERMANIUM NITROGEN PRECURSORS FOR STRAIN ENGINEERING | AIR LIQUIDE ELECTRONICS U.S. LP (US) | 2008-06-19 | — | — | US | disclosed |
| US-5986318-A | (Ge,Si) Nx anti-reflective compositions and integrated circuit devices comprising the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 1999-11-16 | — | — | US | disclosed |