⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28034866 | 0.91 | — | — | |
| Hydrochloric Acid SCHEMBL5724297 | 0.83 | — | — | |
| Ammonia Solution, Strong SCHEMBL9621464 | 0.83 | — | — | |
| SCHEMBL3314 | 0.82 | — | — | |
| SCHEMBL384941 | 0.73 | — | — | |
| SCHEMBL8800081 | 0.73 | — | — | |
| Hydrochloric Acid SCHEMBL10685538 | 0.73 | — | — | |
| Iodide SCHEMBL6470403 | 0.73 | — | — | |
| Water SCHEMBL1885701 | 0.73 | — | — | |
| Phosphine SCHEMBL9469513 | 0.73 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9082828-B2 | Al bond pad clean method | APPLIED MATERIALS, INC. (US) | 2015-07-14 | — | — | US | claimed |
| US-20140113445-A1 | AL BOND PAD CLEAN METHOD | APPLIED MATERIALS, INC. (US) | 2014-04-24 | — | — | US | claimed |
| WO-2024137272-A1 | METHOD OF REDUCING METAL GATE RESISTANCE FOR NEXT GENERATION NMOS DEVICE APPLICATION | APPLIED MATERIALS, INC. (US) | 2024-06-27 | — | — | WO | disclosed |
| US-20240204061-A1 | METHOD OF REDUCING METAL GATE RESISTANCE FOR NEXT GENERATION NMOS DEVICE APPLICATION | APPLIED MATERIALS, INC. | 2024-06-20 | — | — | US | disclosed |
| US-11967488-B2 | Method for treatment of deposition reactor | ASM IP HOLDING B.V. (NL) | 2024-04-23 | — | — | US | disclosed |
| US-20240014012-A9 | METHOD FOR TREATMENT OF DEPOSITION REACTOR | ASM IP HOLDING B.V. (NL) | 2024-01-11 | — | — | US | disclosed |
| US-20230230813-A2 | METHOD FOR TREATMENT OF DEPOSITION REACTOR | ASM IP HOLDING BV (NL) | 2023-07-20 | — | — | US | disclosed |
| US-20210140048-A1 | SEMICONDUCTOR MANUFACTURING APPARATUS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-05-13 | — | — | US | disclosed |
| US-10707164-B2 | Semiconductor devices including a capping layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-07-07 | — | — | US | disclosed |
| US-10600643-B2 | Method of forming thin film and method of manufacturing integrated circuit device using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-03-24 | — | — | US | disclosed |
| US-10468256-B2 | Methods of forming material layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-11-05 | — | — | US | disclosed |
| US-9082828-B2 | Al bond pad clean method | APPLIED MATERIALS, INC. (US) | 2015-07-14 | — | — | US | disclosed |
| US-9076647-B2 | Method of forming an oxide layer and method of manufacturing semiconductor device including the oxide layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-07-07 | — | — | US | disclosed |
| US-20150037980-A1 | SEMICONDUCTOR DEVICES INCLUDING A CAPPING LAYER AND METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING A CAPPING LAYER | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-02-05 | — | — | US | disclosed |
| US-20140220247-A1 | METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR | ASM IP HOLDING B.V. (NL) | 2014-08-07 | — | — | US | disclosed |
| US-20140113445-A1 | AL BOND PAD CLEAN METHOD | APPLIED MATERIALS, INC. (US) | 2014-04-24 | — | — | US | disclosed |
| US-8637390-B2 | Metal gate structures and methods for forming thereof | APPLIED MATERIALS, INC. (US) | 2014-01-28 | — | — | US | disclosed |
| CN-102959710-A | Metal gate structures and methods for forming thereof | APPLIED MATERIALS INC | 2013-03-06 | — | — | CN | disclosed |
| US-20120276721-A1 | METHOD OF FORMING AN OXIDE LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE OXIDE LAYER | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-11-01 | — | — | US | disclosed |
| US-20080233742-A1 | METHOD OF DEPOSITING ALUMINUM LAYER AND METHOD OF FORMING CONTACT OF SEMICONDUCTOR DEVICE USING THE SAME | HYNIX SEMICONDUCTOR INC. (KR) | 2008-09-25 | — | — | US | disclosed |