SCHEMBL4897293

SCHEMBL4897293

CC1(OC=O)CC2CCC1C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5917691 0.82 ALOX5AP (0.30)
SCHEMBL17929086 0.81
SCHEMBL12389976 0.75
SCHEMBL5917693 0.74 ALOX5AP (0.30)
SCHEMBL19940888 0.74
SCHEMBL14476934 0.73 ALOX5AP (0.33)
SCHEMBL6356191 0.73
SCHEMBL14982585 0.73
SCHEMBL13564246 0.73
SCHEMBL28318267 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230152693-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-05-18 US disclosed
US-9490144-B2 Quaternary ammonium salt compound, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-08 US disclosed
US-20160276152-A1 PATTERNING PROCESS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2016-09-22 US disclosed
US-9377690-B2 Compositon for forming metal oxide-containing film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-28 US disclosed
US-9312127-B2 Method for producing semiconductor apparatus substrate SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-12 US disclosed
US-20160096977-A1 COMPOSITION FOR FORMING A COATING TYPE SILICON-CONTAINING FILM, SUBSTRATE, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-07 US disclosed
US-20160096978-A1 COMPOSITION FOR FORMING A COATING TYPE BPSG FILM, SUBSTRATE, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-07 US disclosed
US-20160064220-A1 METHOD FOR PRODUCING SEMICONDUCTOR APPARATUS SUBSTRATE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-03-03 US disclosed
US-9248693-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 US disclosed
US-20150357204-A1 QUATERNARY AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-10 US disclosed
US-8142977-B2 mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator FUJIFILM CORPORATION (JP) 2012-03-27 US disclosed
CN-100569944-C Production of polyketides and other natural products BIOTICA TECH LTD (GB) 2009-12-16 CN disclosed
CN-101302550-A Production of polyketides and other natural products BIOTICA TECH LTD (GB) 2008-11-12 CN disclosed
US-7435527-B2 Mixture of acid generator and resin insoluble in alkaline developer and another acid decomposable compound FUJIFILM CORPORATION (JP) 2008-10-14 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080187859-A1 Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2008-08-07 US disclosed
US-20070269735-A1 Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2007-11-22 US disclosed
EP-1736829-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-12-27 EP disclosed
EP-1726608-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-11-29 EP disclosed
CN-1668741-A Production of polyketides and other natural products BIOTICA TECH LTD (GB) 2005-09-14 CN disclosed