Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 1/20 | 0.56 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.56 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.56 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16295072 | 0.91 | MEN1 (0.62) | MEN1KMT2ATDP1 | |
| SCHEMBL554655 | 0.91 | MEN1 (0.62) | MEN1KMT2ATDP1 | |
| SCHEMBL7260823 | 0.91 | MEN1 (0.62) | MEN1KMT2ATDP1 | |
| Perfluorocyclobutane SCHEMBL28767789 | 0.91 | MEN1 (0.62) | MEN1KMT2ATDP1 | |
| SCHEMBL29037481 | 0.91 | MEN1 (0.62) | MEN1KMT2ATDP1 | |
| SCHEMBL61759 | 0.91 | MEN1 (0.62) | MEN1KMT2ATDP1 | |
| SCHEMBL396358 | 0.91 | MEN1 (0.62) | MEN1KMT2ATDP1 | |
| Perfluorocyclobutane SCHEMBL24521 | 0.91 | MEN1 (0.62) | MEN1KMT2ATDP1 | |
| SCHEMBL693244 | 0.91 | — | — | |
| SCHEMBL812362 | 0.91 | MEN1 (0.62) | MEN1KMT2ATDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20080023144-A1 | DIELECTRIC ETCH TOOL CONFIGURED FOR HIGH DENSITY AND LOW BOMBARDMENT ENERGY PLASMA PROVIDING HIGH ETCH RATES | APPLIED MATERIALS, INC. | 2008-01-31 | — | — | US | disclosed |
| US-20060118519-A1 | Dielectric etch method with high source and low bombardment plasma providing high etch rates | APPLIED MATERIALS INC. | 2006-06-08 | — | — | US | disclosed |
| EP-1667216-A2 | Dielectric etch method with high density and low bombardment energy plasma providing high etch rates | Applied Materials, Inc. (US) | 2006-06-07 | — | — | EP | disclosed |