⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3124716 | 0.86 | — | — | |
| SCHEMBL90407 | 0.78 | — | — | |
| SCHEMBL11736858 | 0.70 | — | — | |
| SCHEMBL16405966 | 0.67 | — | — | |
| SCHEMBL21434292 | 0.67 | — | — | |
| SCHEMBL7559178 | 0.67 | — | — | |
| SCHEMBL17701118 | 0.67 | — | — | |
| SCHEMBL19275257 | 0.67 | — | — | |
| Tert-Butylamine SCHEMBL2231254 | 0.62 | — | — | |
| SCHEMBL8720892 | 0.62 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 4702 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260136856-A1 | METHOD AND SYSTEM FOR FORMING SILICON NITRIDE ON A SIDEWALL OF A FEATURE | ASM IP HOLDING BV (NL) | 2026-05-14 | — | — | US | claimed |
| US-12628578-B2 | Substrate processing method | ASM IP HOLDING B.V. (NL) | 2026-05-12 | — | — | US | claimed |
| US-20260103796-A1 | MULTILAYER COATINGS FOR REDUCED SURFACE METALS ON OXIDE FILMS | ENTEGRIS INC (US) | 2026-04-16 | — | — | US | claimed |
| US-12571094-B2 | Method of processing substrate, substrate processing apparatus, and recording medium | Kokusai Electric Corporation (JP) | 2026-03-10 | — | — | US | claimed |
| US-20260052917-A1 | METHOD FOR FORMING AN INSULATING LAYER PATTERN AND SEMICONDUCTOR DEVICE | DONGJIN SEMICHEM CO LTD (KR) | 2026-02-19 | — | — | US | claimed |
| US-12546000-B2 | Substrate processing method | ASM IP HOLDING B.V. (NL) | 2026-02-10 | — | — | US | claimed |
| US-12550644-B2 | Method and system for forming silicon nitride on a sidewall of a feature | ASM IP HOLDING B.V. (NL) | 2026-02-10 | — | — | US | claimed |
| US-20260035783-A1 | SIN FILM EMBEDDING METHOD AND FILM FORMATION APPARATUS | TOKYO ELECTRON LTD (JP) | 2026-02-05 | — | — | US | claimed |
| US-12525451-B2 | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures | ASM IP HOLDING B.V. (NL) | 2026-01-13 | — | — | US | claimed |
| US-12518966-B2 | Selective plasma enhanced atomic layer deposition | VERSUM MATERIALS US, LLC (US) | 2026-01-06 | — | — | US | claimed |
| US-6500772-B2 | In the presence of plasma energy contacting the substrate with a reactive gas component comprising an alkylaminosilane | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-12-31 | — | — | US | claimed |
| US-6486015-B1 | Low temperature carbon rich oxy-nitride for improved RIE selectivity | INFINEON TECHNOLOGIES AG (DE) | 2002-11-26 | — | — | US | claimed |
| US-20020127763-A1 | Sidewall spacers and methods of making same | INTEL CORPORATION | 2002-09-12 | — | — | US | claimed |
| US-20020090835-A1 | Methods and materials for depositing films on semiconductor substrates | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-07-11 | — | — | US | claimed |
| EP-0964441-B1 | Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino)silane | AIR PROD & CHEM (US) | 2002-05-02 | — | — | EP | claimed |
| EP-1199743-A2 | Method of fabricating a stack consisting of a layer of Si3N4 topped by a layer of SiO2 on a semiconductor substrate | TEXAS INSTRUMENTS DEUTSCHLAND GMBH (DE) | 2002-04-24 | — | — | EP | claimed |
| EP-1152460-A2 | Method of etching a contact by RIE using a low temperature carbon rich oxy-nitride layer for improving etching selectivity | Infineon Technologies North America Corp. (US) | 2001-11-07 | — | — | EP | claimed |
| US-6268299-B1 | Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2001-07-31 | — | — | US | claimed |
| EP-0964441-A2 | Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino)silane | AIR PRODUCTS AND CHEMICALS, INC. (US) | 1999-12-15 | — | — | EP | claimed |
| US-5976991-A | Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane | AIR PRODUCTS AND CHEMICALS, INC. (US) | 1999-11-02 | — | — | US | claimed |