Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA4 | P22748 | 2/20 | 0.38 |
| ▸ | CA2 | P00918 | 1/20 | 0.37 |
| ▸ | CA1 | P00915 | 2/20 | 0.33 |
| ▸ | CASP1 | P29466 | 1/20 | 0.33 |
| ▸ | FAHD1 | Q6P587 | 1/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
| ▸ | POLB | P06746 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoroacetic Acid SCHEMBL29039865 | 0.96 | CA4 (0.36) | CA4CA2CA1CASP1FAHD1 | |
| Trifluoroacetic Acid SCHEMBL9296832 | 0.96 | CA4 (0.36) | CA4CA2CA1CASP1FAHD1 | |
| Trifluoroacetic Acid SCHEMBL11639909 | 0.93 | CA4 (0.35) | CA4CA2CASP1 | |
| Trifluoroacetic Acid SCHEMBL6912539 | 0.92 | CA4 (0.38) | CA4CA2CA1CASP1FAHD1 | |
| Trifluoroacetic Acid SCHEMBL20569660 | 0.92 | CA4 (0.38) | CA4CA2CA1CASP1FAHD1 | |
| Trifluoroacetic Acid SCHEMBL108536 | 0.92 | — | — | |
| Trifluoroacetic Acid SCHEMBL282294 | 0.92 | — | — | |
| Trifluoroacetic Acid SCHEMBL20541013 | 0.92 | CA4 (0.38) | CA4CA2CA1CASP1FAHD1 | |
| Trifluoroacetic Acid SCHEMBL2828447 | 0.92 | CA4 (0.38) | CA4CA2CA1CASP1FAHD1 | |
| Trifluoroacetic Acid SCHEMBL4528375 | 0.92 | CA4 (0.38) | CA4CA2CA1CASP1FAHD1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 109 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-120005614-A | Halide perovskite luminescent material | 天津赛威工业技术有限公司 | 2025-05-16 | — | — | CN | claimed |
| CN-115873224-B | Catalyst composition for polyester, hydrolysis-resistant polyester film and preparation method | 中国石油化工股份有限公司 | 2025-03-07 | — | — | CN | claimed |
| CN-119390625-A | Preparation method of 1- (aryl sulfonyl) bicyclo [1.1.0] butane compound | 苏州百灵威超精细材料有限公司 | 2025-02-07 | — | — | CN | claimed |
| US-12134670-B2 | Composition used in 3D printing system, its application thereof | BASF SE (DE) | 2024-11-05 | — | — | US | claimed |
| CN-118056805-A | Preparation method of trifluoroiodomethane | 浙江蓝天环保高科技股份有限公司 | 2024-05-21 | — | — | CN | claimed |
| US-20240120127-A1 | METHOD FOR PRODUCING AN ELECTRICALLY CONDUCTIVE CARBON CONDUCTOR WITH CARBON STRUCTURAL FORMS | ROBERT BOSCH GMBH (DE) | 2024-04-11 | — | — | US | claimed |
| EP-4264642-A1 | METHOD FOR PRODUCING AN ELECTRICALLY CONDUCTIVE CARBON CONDUCTOR WITH CARBON STRUCTURAL FORMS | Robert Bosch GmbH (DE) | 2023-10-25 | — | — | EP | claimed |
| CN-116583917-A | Method for producing an electrically conductive carbon conductor in the form of a carbon structure | 罗伯特·博世有限公司 | 2023-08-11 | — | — | CN | claimed |
| CN-115873224-A | Catalyst composition for polyester, hydrolysis-resistant polyester film and preparation method | 中国石油化工股份有限公司 | 2023-03-31 | — | — | CN | claimed |
| CN-110846037-B | Up-conversion luminescent material and core-shell type fluorescent nano material with up-conversion luminescence and down-conversion long afterglow luminescence | 杭州安旭生物科技股份有限公司 | 2023-02-28 | — | — | CN | claimed |
| US-20200106105-A1 | HIGH-ENERGY CATHODE MATERIAL PARTICLES WITH OXY-FLUORIDE SURFACES FOR AQUEOUS PROCESSING | ROBERT BOSCH GMBH (DE) | 2020-04-02 | — | — | US | claimed |
| CN-110846037-A | Up-conversion luminescent material and core-shell type fluorescent nano material with up-conversion luminescence and down-conversion long afterglow luminescence | 杭州安旭生物科技股份有限公司 | 2020-02-28 | — | — | CN | claimed |
| EP-3394675-B1 | MATERIALS CONTAINING METAL OXIDES, PROCESSES FOR MAKING SAME, AND PROCESSES FOR USING SAME | AZ ELECTRONIC MAT LUXEMBOURG SARL (LU) | 2020-01-29 | — | — | EP | claimed |
| US-10241409-B2 | Materials containing metal oxides, processes for making same, and processes for using same | AZ Electronic Materials (Luxembourg) S.à.r.l. (LU) | 2019-03-26 | — | — | US | claimed |
| US-20170176860-A1 | MATERIALS CONTAINING METAL OXIDES, PROCESSES FOR MAKING SAME, AND PROCESSES FOR USING SAME | AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L. (LU) | 2017-06-22 | — | — | US | claimed |
| US-20110189815-A1 | FORMATION OF CIGS ABSORBER LAYER MATERIALS USING ATOMIC LAYER DEPOSITION AND HIGH THROUGHPUT SURFACE TREATMENT ON COILED FLEXIBLE SUBSTRATES | NANOSOLAR, INC. | 2011-08-04 | — | — | US | claimed |
| US-7858151-B2 | Elements of groups IB, IIIA, VIB formed by placing a substrate in a treatment chamber, performing atomic layer deposition of a group IB element and/or group IIIA elements from separate sources onto a substrate to form a film, group VIA element is then incorporated into the film; solar cell; lamination | NANOSOLAR, INC. (US) | 2010-12-28 | — | — | US | claimed |
| WO-2005081789-A2 | Formation of CIGS Absorber Layer by Atomic Layer Deposition | NANOSOLAR, INC. (US) | 2005-09-09 | — | — | WO | claimed |
| US-20050186342-A1 | Elements of groups IB, IIIA, VIB formed by placing a substrate in a treatment chamber, performing atomic layer deposition of a group IB element and/or group IIIA elements from separate sources onto a substrate to form a film, group VIA element is then incorporated into the film; solar cell; lamination | NANOSOLAR, INC. (US) | 2005-08-25 | — | — | US | claimed |
| US-6830704-B2 | Contains a Lewis acid metal salt and a compound having clathrating ability. | TOAGOSEI CO., LTD. (JP) | 2004-12-14 | — | — | US | claimed |