⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL143230 | 1.00 | — | — | |
| SCHEMBL9749855 | 1.00 | KDM3A (0.50) | — | |
| SCHEMBL18979850 | 0.82 | — | — | |
| SCHEMBL16738720 | 0.82 | — | — | |
| SCHEMBL3382211 | 0.82 | — | — | |
| SCHEMBL1685622 | 0.82 | KDM3A (0.33) | — | |
| SCHEMBL4349989 | 0.82 | — | — | |
| SCHEMBL17472515 | 0.82 | — | — | |
| SCHEMBL4227452 | 0.82 | — | — | |
| SCHEMBL8214807 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 2736 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024148724-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR | 长鑫存储技术有限公司 | 2024-07-18 | — | — | WO | claimed |
| US-20240237371-A9 | Multilayer Back Contacts for Perovskite Photovoltaic Devices | FIRST SOLAR, INC. (US) | 2024-07-11 | — | — | US | claimed |
| CN-118299430-A | Gallium nitride radio frequency Schottky diode with asymmetric saturation current and manufacturing method thereof | 江南大学 | 2024-07-05 | — | — | CN | claimed |
| CN-110911278-B | Method of etching metal barrier layer and metal layer and method of manufacturing semiconductor device | 三星电子株式会社 | 2024-07-05 | — | — | CN | claimed |
| US-12014987-B2 | Electro-migration reduction | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-06-18 | — | — | US | claimed |
| CN-118213495-A | Negative electrode material and battery | 贝特瑞新材料集团股份有限公司 | 2024-06-18 | — | — | CN | claimed |
| CN-114214663-B | Nickel nitride electrocatalytic material modified by nitrogen vacancy and preparation method and application thereof | 武汉工程大学 | 2024-06-14 | — | — | CN | claimed |
| CN-118176109-A | Laminate and electrode for electrolysis | 株式会社力森诺科 | 2024-06-11 | — | — | CN | claimed |
| CN-118127556-A | Preparation method of nickel-molybdenum-titanium-based composite coating electrode | 东北大学佛山研究生创新学院 | 2024-06-04 | — | — | CN | claimed |
| CN-118099404-A | Negative electrode material, preparation method thereof and lithium ion battery | 贝特瑞新材料集团股份有限公司 | 2024-05-28 | — | — | CN | claimed |
| EP-0591459-A1 | PROCESS OF MAKING METAL OXIDES | TELEDYNE INDUSTRIES, INC. (US) | 1994-04-13 | — | — | EP | claimed |
| US-5284639-A | Hydriding alloys containing iron or nickel with niobium, then reacting metal hydrides with nitrogen under high temperature and pressure, oxygen-free conditions | TELEDYNE INDUSTRIES, INC. (US) | 1994-02-08 | — | — | US | claimed |
| US-5187557-A | Semiconductor capacitor with a metal nitride film and metal oxide dielectric | NEC CORPORATION (JP) | 1993-02-16 | — | — | US | claimed |
| WO-1993000292-A1 | PROCESS OF MAKING NIOBIUM OXIDE | TELEDYNE INDUSTRIES, INC. (US) | 1993-01-07 | — | — | WO | claimed |
| WO-1993000293-A1 | METHOD FOR THE PREPARATION OF NIOBIUM NITRIDE | TELEDYNE INDUSTRIES, INC. (US) | 1993-01-07 | — | — | WO | claimed |
| US-4756928-A | Method of forming electrodes of an electronic component of chip type for connecting to the external | MURATA MANUFACTURING CO., LTD. (JP) | 1988-07-12 | — | — | US | claimed |
| US-4497659-A | PRECIPITATION USING CHROMOUS SULFATE | AMAX INC. (US) | 1985-02-05 | — | — | US | claimed |
| US-4273748-A | HYDROGEN SULFIDE OR AMMONIA-CONTAINING FUEL GAS, NICKEL OR IRON OXIDE AND NITRIDES | HITACHI, LTD. (JP) | 1981-06-16 | — | — | US | claimed |
| US-3998627-A | STRIPPING | SHERRITT GORDON MINES LIMITED (CA) | 1976-12-21 | — | — | US | claimed |
| US-3964812-A | Method for producing a strontium metal film on internal surfaces of a CRT | RCA CORPORATION (US) | 1976-06-22 | — | — | US | claimed |