SCHEMBL499404

SCHEMBL499404

[O]S(=O)(=O)c1c(Cl)ccc2ccccc12

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP2A6 P11509 5/20 0.52
CYP1A2 P05177 2/20 0.45
ALDH1A1 P00352 2/20 0.42
HSD17B10 Q99714 2/20 0.42
TSHR P16473 1/20 0.42
TDP1 Q9NUW8 1/20 0.42
PAX8 Q06710 1/20 0.42
MAPT P10636 3/20 0.40
L3MBTL1 Q9Y468 1/20 0.40
HPRT1 P00492 1/20 0.39
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38
CA9 Q16790 1/20 0.38
CYP1B1 Q16678 2/20 0.37
HIF1A Q16665 1/20 0.37
CYP1A1 P04798 1/20 0.36
DNMT1 P26358 1/20 0.36
ERN1 O75460 1/20 0.36
TP53 P04637 1/20 0.36
KEAP1 Q14145 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1036724 0.84 CYP2A6 (0.52) CYP2A6CYP1A2ALDH1A1HSD17B10TSHR
SCHEMBL8416358 0.82 CYP2A6 (0.50) CYP2A6CYP1A2ALDH1A1HSD17B10TSHR
SCHEMBL2569228 0.82 CYP2A6 (0.50) CYP2A6CYP1A2ALDH1A1HSD17B10TSHR
Silver SCHEMBL11723519 0.81 CYP2A6 (0.48) CYP2A6CYP1A2ALDH1A1HSD17B10TSHR
Lithium Ion SCHEMBL3702126 0.81 CYP2A6 (0.48) CYP2A6CYP1A2ALDH1A1HSD17B10TSHR
SCHEMBL3696175 0.81 CYP2A6 (0.48) CYP2A6CYP1A2ALDH1A1HSD17B10TSHR
SCHEMBL3702128 0.81 CYP2A6 (0.48) CYP2A6CYP1A2ALDH1A1HSD17B10TSHR
SCHEMBL3713255 0.81 CYP2A6 (0.48) CYP2A6CYP1A2ALDH1A1HSD17B10TSHR
SCHEMBL3696173 0.81 CYP2A6 (0.48) CYP2A6CYP1A2ALDH1A1HSD17B10TSHR
Hydrochloric Acid SCHEMBL28079045 0.81 CYP2A6 (0.48) CYP2A6CYP1A2ALDH1A1HSD17B10TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111694215-B Photoresist composition and method for forming photolithographic pattern 常州强力先端电子材料有限公司 2022-04-19 CN disclosed
CN-111694215-A Photoresist composition and method for forming photolithographic pattern 常州强力先端电子材料有限公司 2020-09-22 CN disclosed
US-8105763-B2 Method of forming plated product using negative photoresist composition and photosensitive composition used therein TOKYO OHKA KOGYO CO., LTD. (JP) 2012-01-31 US disclosed
US-7879525-B2 A photoresist comprising a resin that undergoes a change in alkali solubility by an acid, an acid generating compound and a corrosion inhibitor, e.g. trimercapto-1,3,5-triazine; stabiliity prior to development; used in the manufacturing of connection terminals during the mounting of semiconductors TOKYO OHKA KOGYO CO., LTD. (JP) 2011-02-01 US disclosed
EP-2202579-A2 Chemically amplified photoresist composition, photoresist laminated product, manufacturing method for photoresist composition, manufacturing method for photoresist pattern, and manufacturing method for connection element Tokyo Ohka Kogyo Co., Ltd. (JP) 2010-06-30 EP disclosed
US-20080032242-A1 Method of Forming Plated Product Using Negative Photoresist Composition and Photosensitive Composition Used Therein TOKYO OHKA KOGYO CO., LTD. (JP) 2008-02-07 US disclosed
US-20070275320-A1 Chemically Amplified Photorestist Composition, Laminated Product, and Connection Element HITACHI CONSTRUCTION MACHINERY CO., LTD. (JP) 2007-11-29 US disclosed
EP-1818722-A1 CHEMICAL AMPLIFICATION PHOTORESIST COMPOSITION, PHOTORESIST LAYER LAMINATE, METHOD FOR PRODUCING PHOTORESIST COMPOSITION, METHOD FOR PRODUCING PHOTORESIST PATTERN AND METHOD FOR PRODUCING CONNECTING TERMINAL TOKYO OHKA KOGYO CO., LTD. (JP) 2007-08-15 EP disclosed
EP-1761823-A1 METHOD OF FORMING PLATED PRODUCT USING NEGATIVE PHOTORESIST COMPOSITION AND PHOTOSENSITIVE COMPOSITION USED THEREIN TOKYO OHKA KOGYO CO., LTD. (JP) 2007-03-14 EP disclosed
WO-2006003757-A1 METHOD OF FORMING PLATED PRODUCT USING NEGATIVE PHOTORESIST COMPOSITION AND PHOTOSENSITIVE COMPOSITION USED THEREIN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-01-12 WO disclosed
US-6838229-B2 Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2005-01-04 US disclosed
US-20030039921-A1 Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same TOKYO OHKA KOGYO CO., LTD. 2003-02-27 US disclosed
US-5955241-A Chemical-amplification-type negative resist composition and method for forming negative resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 1999-09-21 US disclosed