SCHEMBL5000926

SCHEMBL5000926

CCCCCCOC(=O)c1c(CCCCCC)c(C(=O)O)c(CCCCCC)c(CCCCCC)c1C(=O)O

nearest known ligand 0.46

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.46
TSHR P16473 2/20 0.46
LMNA P02545 1/20 0.46
ESR1 P03372 4/20 0.46
TP53 P04637 1/20 0.44
CYP3A4 P08684 1/20 0.44
MAPK1 P28482 1/20 0.44
NPC1 O15118 1/20 0.43
MAPT P10636 1/20 0.43
RAB9A P51151 1/20 0.43
AKR1C4 P17516 1/20 0.43
AKR1C3 P42330 1/20 0.43
AKR1C2 P52895 1/20 0.43
AKR1C1 Q04828 1/20 0.43
NAAA Q02083 1/20 0.42
KDM4E B2RXH2 1/20 0.41
POLB P06746 1/20 0.41
HSD17B10 Q99714 1/20 0.41
HCAR2 Q8TDS4 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14989179 0.85 BID (0.49) ALDH1A1MAPT
SCHEMBL63310 0.85 BID (0.49) ALDH1A1MAPT
SCHEMBL14989245 0.85 BID (0.49) ALDH1A1MAPT
SCHEMBL21385065 0.85 BID (0.49) ALDH1A1MAPT
SCHEMBL21384980 0.85 BID (0.49) ALDH1A1MAPT
SCHEMBL17798912 0.85 BID (0.49) ALDH1A1MAPT
SCHEMBL9718193 0.85 BID (0.49) ALDH1A1MAPT
SCHEMBL14989264 0.85 BID (0.49) ALDH1A1MAPT
SCHEMBL22471851 0.85 BID (0.49) ALDH1A1MAPT
SCHEMBL350450 0.85 BID (0.49) ALDH1A1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
US-7462678-B2 Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film JSR CORPORATION (JP) 2008-12-09 US disclosed
US-7268201-B2 Insulating-film forming material and insulating film using the same FUJIFILM CORPORATION (JP) 2007-09-11 US disclosed
US-7166362-B2 Film-forming composition, production process therefor, and porous insulating film FUJI PHOTO FILM CO., LTD. (JP) 2007-01-23 US disclosed
US-7144970-B2 Insulating-film forming material and insulating film using the same FUJI PHOTO FILM CO., LTD. (JP) 2006-12-05 US disclosed
EP-1253175-B1 Composition for film formation, method of film formation, and silica-based film JSR CORP (JP) 2006-10-11 EP disclosed
US-20050096415-A1 Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film JSR CORPORATION (JP) 2005-05-05 US disclosed
US-20050074556-A1 Film-forming composition, production process therefor, and porous insulating film FUJI PHOTO FILM CO., LTD. 2005-04-07 US disclosed
EP-1520891-A1 Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film JSR Corporation (JP) 2005-04-06 EP disclosed
US-20040198922-A1 Insulating-film forming material and insulating film using the same FUJI PHOTO FILM CO., LTD. 2004-10-07 US disclosed
US-20040198855-A1 Insulating-film forming material and insulating film using the same FUJI PHOTO FILM CO., LTD. 2004-10-07 US disclosed
US-6800330-B2 PRODUCT OBTAINED BY HYDROLYZING AND CONDENSING AT LEAST ONE SILANE COMPOUND, A COMPOUND COMPATIBLE WITH OR DISPERSIBLE IN THAT COMPOUND AND HAVING A BOILING POINT OR DECOMPOSITION TEMPERATURE OF 250-450 DEGREES C, SOLVENT JSR CORPORATION (JP) 2004-10-05 US disclosed
US-20020189495-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-12-19 US disclosed
EP-1253175-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2002-10-30 EP disclosed