⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15954901 | 0.91 | — | — | |
| SCHEMBL8627358 | 0.91 | — | — | |
| Fluoride SCHEMBL27720944 | 0.91 | — | — | |
| Hydrochloric Acid SCHEMBL6870529 | 0.91 | — | — | |
| SCHEMBL26338382 | 0.89 | — | — | |
| SCHEMBL27777051 | 0.89 | — | — | |
| SCHEMBL45345 | 0.89 | — | — | |
| Strontium SCHEMBL5886585 | 0.84 | — | — | |
| Calcium SCHEMBL8630626 | 0.84 | — | — | |
| SCHEMBL23878703 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 2021 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4747425-A1 | INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON PATTERNED SUBSTRATE | GELEST, INC. (US) | 2026-05-27 | — | — | EP | claimed |
| US-20260142642-A1 | BULK ACOUSTIC WAVE (BAW) RESONATOR INCLUDING BILATERAL DIELECTRIC LAYERS FOR IMPROVED QUALITY FACTOR AND METHOD OF MAKING | RF360 SINGAPORE PTE LTD (SG) | 2026-05-21 | — | — | US | claimed |
| WO-2026106543-A1 | BULK ACOUSTIC WAVE (BAW) RESONATOR INCLUDING BILATERAL DIELECTRIC LAYERS FOR IMPROVED QUALITY FACTOR AND METHOD OF MAKING | RF360 SINGAPORE PTE. LTD. (SG) | 2026-05-21 | — | — | WO | claimed |
| CN-122010556-A | PTC ceramic material with high stability and preparation method thereof | 宜都市博通电子有限责任公司 | 2026-05-12 | — | — | CN | claimed |
| CN-116053125-B | Surface acoustic wave temperature compensation filter wafer cut by using plasma | 全讯射频科技(无锡)有限公司 | 2026-05-12 | — | — | CN | claimed |
| EP-4735661-A1 | INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON METAL SUBSTRATE | GELEST, INC. (US) | 2026-05-06 | — | — | EP | claimed |
| US-20250289999-A1 | LUMINESCENT PAINT CONTAINING UPCONVERSION PHOSPHOR | KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS (SA) | 2025-09-18 | — | — | US | claimed |
| US-20250267939-A1 | SILICON-ON-INSULATOR TRANSVERSE DEVICE AND MANUFACTURING METHOD THEREFOR | CSMC TECHNOLOGIES FAB2 CO., LTD. (CN) | 2025-08-21 | — | — | US | claimed |
| US-12381076-B2 | Inherent area selective deposition of silicon-containing dielectric on metal substrate | GELEST, INC. (US) | 2025-08-05 | — | — | US | claimed |
| CN-113452342-B | Surface acoustic wave resonator and manufacturing method thereof | 江苏卓胜微电子股份有限公司 | 2025-05-27 | — | — | CN | claimed |
| EP-0953066-A1 | INDUCTIVELY COUPLED PLASMA CVD | LAM RESEARCH CORPORATION (US) | 1999-11-03 | — | — | EP | claimed |
| US-5912188-A | Method of forming a contact hole in an interlevel dielectric layer using dual etch stops | ADVANCED MICRO DEVICES, INC. (US) | 1999-06-15 | — | — | US | claimed |
| US-5910020-A | Method for fabricating a semiconductor device having a refractory metal pillar for electrical connection | NEC CORPORATION (JP) | 1999-06-08 | — | — | US | claimed |
| WO-1999017359-A1 | INTERCONNECT STRUCTURE WITH A LOW PERMITTIVITY DIELECTRIC LAYER | ADVANCED MICRO DEVICES, INC. (US) | 1999-04-08 | — | — | WO | claimed |
| US-5811356-A | Reduction in mobile ion and metal contamination by varying season time and bias RF power during chamber cleaning | APPLIED MATERIALS, INC. (US) | 1998-09-22 | — | — | US | claimed |
| WO-1998028465-A1 | INDUCTIVELY COUPLED PLASMA CVD | LAM RESEARCH CORPORATION (US) | 1998-07-02 | — | — | WO | claimed |
| EP-0825278-A1 | Method for reducing contaminants in plasma chambers | APPLIED MATERIALS, INC. (US) | 1998-02-25 | — | — | EP | claimed |
| US-5395796-A | Etch stop layer using polymers for integrated circuits | ADVANCED MICRO DEVICES, INC. | 1995-03-07 | — | — | US | claimed |
| US-5258332-A | Method of manufacturing semiconductor devices including rounding of corner portions by etching | KABUSHIKI KAISHA TOSHIBA (JP) | 1993-11-02 | — | — | US | claimed |
| US-5198298-A | Etch stop layer using polymers | ADVANCED MICRO DEVICES, INC. (US) | 1993-03-30 | — | — | US | claimed |