SCHEMBL504331

SCHEMBL504331

[Nb].[Ni].[SiH4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL504332 1.00
SCHEMBL34463662 0.87
SCHEMBL28121447 0.87
SCHEMBL10955660 0.82
SCHEMBL7699345 0.82
SCHEMBL25075 0.82
SCHEMBL707264 0.82
SCHEMBL25073 0.82
SCHEMBL707265 0.82
SCHEMBL2010171 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 53 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8498148-B2 Non-volatile magnetic memory element with graded layer AVALANCHE TECHNOLOGY, INC. (US) 2013-07-30 US claimed
US-8498149-B2 Non-volatile magnetic memory element with graded layer AVALANCHE TECHNOLOGY, INC. (US) 2013-07-30 US claimed
US-8498150-B2 Non-volatile magnetic memory element with graded layer AVALANCHE TECHNOLOGY, INC. (US) 2013-07-30 US claimed
US-8493779-B2 Non-volatile magnetic memory element with graded layer AVALANCHE TECHNOLOGY, INC. (US) 2013-07-23 US claimed
US-8493778-B2 Non-volatile magnetic memory element with graded layer AVALANCHE TECHNOLOGY, INC. (US) 2013-07-23 US claimed
US-8493780-B2 Non-volatile magnetic memory element with graded layer AVALANCHE TECHNOLOGY, INC. (US) 2013-07-23 US claimed
US-8488376-B2 Non-volatile magnetic memory element with graded layer AVALANCHE TECHNOLOGY, INC. (US) 2013-07-16 US claimed
US-20130087869-A1 NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER AVALANCHE TECHNOLOGY, INC. (US) 2013-04-11 US claimed
US-20130087872-A1 NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER AVALANCHE TECHNOLOGY, INC. (US) 2013-04-11 US claimed
US-20130088915-A1 NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER AVALANCHE TECHNOLOGY, INC. (US) 2013-04-11 US claimed
US-8399942-B2 Non-volatile magnetic memory element with graded layer AVALANCHE TECHNOLOGY, INC. (US) 2013-03-19 US claimed
US-8399943-B2 Non-volatile magnetic memory element with graded layer AVALANCHE TECHNOLOGY, INC. (US) 2013-03-19 US claimed
US-20120230095-A1 NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER AVALANCHE TECHNOLOGY, INC. (US) 2012-09-13 US claimed
EP-2118893-B1 NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER AVALANCHE TECHNOLOGY INC (US) 2012-05-16 EP claimed
US-20120026785-A1 Non-Volatile Magnetic Memory Element with Graded Layer AVALANCHE TECHNOLOGY, INC. (US) 2012-02-02 US claimed
US-20120025338-A1 Non-Volatile Magnetic Memory Element with Graded Layer AVALANCHE TECHNOLOGY, INC. (US) 2012-02-02 US claimed
US-8063459-B2 Non-volatile magnetic memory element with graded layer Avalanche Technologies, Inc. (US) 2011-11-22 US claimed
EP-2118893-A2 NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER Yadav Technology, Inc. (US) 2009-11-18 EP claimed
WO-2008100871-A2 NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER YADAV TECHNOLOGY, INC. (US) 2008-08-21 WO claimed
US-20080191295-A1 Non-Volatile Magnetic Memory Element with Graded Layer YADAV TECHNOLOGY (US) 2008-08-14 US claimed