SCHEMBL50634

SCHEMBL50634

O=[InH].[GaH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27900456 1.00
SCHEMBL2994581 1.00
SCHEMBL28464783 0.89
SCHEMBL7651644 0.89
SCHEMBL27956780 0.89
SCHEMBL29148849 0.89
SCHEMBL3048696 0.89
SCHEMBL235331 0.89
SCHEMBL21330171 0.89
SCHEMBL27956793 0.89

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 2402 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12604596-B2 Method for manufacturing a perovskite solar cell with an improved hole transport layer and a perovskite solar cell with an improved hole transport layer manufactured by the same method Hanwha Solutions Corporation (KR) 2026-04-14 US claimed
US-20260040838-A1 ATOMIC LAYER DEPOSITION METHOD JUSUNG ENG CO LTD (KR) 2026-02-05 US claimed
US-12520625-B2 Semiconductor light emitting device SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-01-06 US claimed
US-20250393363-A1 LIGHT EMITTING DEVICE AND DISPLAY APPARATUS INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-12-25 US claimed
US-20250228054-A1 OPTOELECTRONIC DEVICE EPISTAR CORPORATION (TW) 2025-07-10 US claimed
CN-119776773-A Gallium indium oxide film and preparation method thereof 桂林电子科技大学 2025-04-08 CN claimed
CN-110416378-B Semiconductor light emitting device 三星电子株式会社 2025-04-04 CN claimed
CN-119710621-A Method for preparing gallium indium oxide film based on atomization chemical vapor deposition 桂林电子科技大学 2025-03-28 CN claimed
CN-119604962-A Atomic layer deposition method 周星工程股份有限公司 2025-03-11 CN claimed
CN-110223999-B Semiconductor light emitting device and method of manufacturing the same 三星电子株式会社 2025-03-11 CN claimed
US-20010050222-A1 PROCESS FOR FORMING ELECTRODES 3M INNOVATIVE PROPERTIES COMPANY 2001-12-13 US claimed
US-6297495-B1 COPPER PHTHALOCYANINE AND PERYLENETETRACARBOXYLIC DIANHYDRIDE PHOTOCONDUCTIVE LAYERS; PHOTOVOLTAIC HETEROJUNCTION THE TRUSTEES OF PRINCETON UNIVERSITY 2001-10-02 US claimed
EP-1048084-A4 ORGANIC PHOTOSENSITIVE OPTOELECTRONIC DEVICE UNIV PRINCETON (US) 2001-05-09 EP claimed
EP-1056596-A1 PROCESS FOR FORMING ELECTRODES POLAROID CORPORATION (US) 2000-12-06 EP claimed
EP-1057048-A1 ANTIREFLECTION FILM Polaroid Corporation (US) 2000-12-06 EP claimed
EP-1048084-A1 ORGANIC PHOTOSENSITIVE OPTOELECTRONIC DEVICE THE TRUSTEES OF PRINCETON UNIVERSITY (US) 2000-11-02 EP claimed
WO-2000011725-A9 ORGANIC PHOTOSENSITIVE OPTOELECTRONIC DEVICE UNIV PRINCETON (US) 2000-08-31 WO claimed
WO-2000011725-A1 ORGANIC PHOTOSENSITIVE OPTOELECTRONIC DEVICE THE TRUSTEES OF PRINCETON UNIVERSITY (US) 2000-03-02 WO claimed
WO-1999042860-A1 ANTIREFLECTION FILM POLAROID CORPORATION (US) 1999-08-26 WO claimed
WO-1999036261-A1 PROCESS FOR FORMING ELECTRODES POLAROID CORPORATION (US) 1999-07-22 WO claimed