⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4860127 | 0.91 | — | — | |
| SCHEMBL28829461 | 0.91 | — | — | |
| SCHEMBL5712316 | 0.91 | — | — | |
| SCHEMBL58986 | 0.89 | — | — | |
| SCHEMBL1310371 | 0.89 | — | — | |
| SCHEMBL578897 | 0.80 | — | — | |
| SCHEMBL491034 | 0.80 | — | — | |
| SCHEMBL3128131 | 0.80 | — | — | |
| SCHEMBL21627255 | 0.80 | — | — | |
| SCHEMBL10519580 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20170067169-A1 | PROCESS FOR OXIDATION REACTIONS | PHILLLIPS 66 COMPANY (US) | 2017-03-09 | — | — | US | claimed |
| US-20080011996-A1 | MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2008-01-17 | — | — | US | claimed |
| US-20250061945-A1 | Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material and Method of Operating | ZENO SEMICONDUCTOR INC (US) | 2025-02-20 | — | — | US | disclosed |
| US-12159669-B2 | Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating | ZENO SEMICONDUCTOR, INC. (US) | 2024-12-03 | — | — | US | disclosed |
| US-20230360702-A1 | Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material and Method of Operating | ZENO SEMICONDUCTOR, INC. | 2023-11-09 | — | — | US | disclosed |
| US-11742022-B2 | Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating | Zeno Semiconductor Inc. (US) | 2023-08-29 | — | — | US | disclosed |
| US-20220093175-A1 | Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material and Method of Operating | ZENO SEMICONDUCTOR, INC. | 2022-03-24 | — | — | US | disclosed |
| US-11211125-B2 | Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating | ZENO SEMICONDUCTOR, INC. (US) | 2021-12-28 | — | — | US | disclosed |
| US-20210074358-A1 | Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material and Method of Operating | ZENO SEMICONDUCTOR, INC. | 2021-03-11 | — | — | US | disclosed |
| US-10861548-B2 | Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating | ZENO SEMICONDUCTOR, INC. (US) | 2020-12-08 | — | — | US | disclosed |
| US-20200118628-A1 | Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material and Method of Operating | ZENO SEMICONDUCTOR, INC. | 2020-04-16 | — | — | US | disclosed |
| US-20160300613-A1 | Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material and Method of Operating | ZENO SEMICONDUCTOR, INC. | 2016-10-13 | — | — | US | disclosed |
| US-9401206-B2 | Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating | ZENO SEMICONDUCTOR, INC. (US) | 2016-07-26 | — | — | US | disclosed |
| US-20150213892-A1 | Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material and Method of Operating | ZENO SEMICONDUCTOR, INC. | 2015-07-30 | — | — | US | disclosed |
| US-9025358-B2 | Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating | ZENO SEMICONDUCTOR INC (US) | 2015-05-05 | — | — | US | disclosed |
| US-8647915-B2 | Hetero-junction photovoltaic device and method of fabricating the device | UT-BATTELLE, LLC (US) | 2014-02-11 | — | — | US | disclosed |
| US-20130094280-A1 | Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material and Method of Operating | ZENO SEMICONDUCTOR, INC. (US) | 2013-04-18 | — | — | US | disclosed |
| US-20120152337-A1 | HETERO-JUNCTION PHOTOVOLTAIC DEVICE AND METHOD OF FABRICATING THE DEVICE | UNIVERSITY OF TENNESSEE RESEARCH FOUNDATION | 2012-06-21 | — | — | US | disclosed |
| US-20080011996-A1 | MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2008-01-17 | — | — | US | disclosed |
| WO-2003067683-A2 | CURRENT COLLECTORS | CELLTECH POWER, INC. (US) | 2003-08-14 | — | — | WO | disclosed |