SCHEMBL512265

SCHEMBL512265

C[SiH2]C.C[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27875542 0.82
SCHEMBL58777 0.82
Fluoride SCHEMBL701367 0.73
Hydrochloric Acid SCHEMBL586751 0.73
Iodide SCHEMBL329454 0.73
Methane SCHEMBL23070747 0.73
Ammonia Solution, Strong SCHEMBL23701214 0.73
SCHEMBL20240849 0.73
SCHEMBL17202621 0.73
SCHEMBL7053007 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 443 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6348725-B1 None US claimed
CN-112390656-B Method for continuously preparing ceramic matrix composite material section bar and section bar prepared by method 北京信汇碳硅科技有限公司 2022-12-20 CN claimed
CN-112390656-A Method for continuously preparing ceramic matrix composite material section bar and section bar prepared by method 北京信汇碳硅科技有限公司 2021-02-23 CN claimed
US-20190221771-A1 BUFFER LAYER FOR ORGANIC LIGHT EMITTING DEVICES AND METHOD OF MAKING THE SAME UNIVERSAL DISPLAY CORPORATION 2019-07-18 US claimed
US-20170117503-A1 BUFFER LAYER FOR ORGANIC LIGHT EMITTING DEVICES AND METHOD OF MAKING THE SAME UNIVERSAL DISPLAY CORPORATION 2017-04-27 US claimed
US-20160118621-A1 HYBRID BARRIER LAYER FOR SUBSTRATES AND ELECTRONIC DEVICES UNIVERSAL DISPLAY CORPORATION 2016-04-28 US claimed
WO-2015002756-A1 HYBRID BARRIER LAYER FOR SUBSTRATES AND ELECTRONIC DEVICES UNIVERSAL DISPLAY CORPORATION (US) 2015-01-08 WO claimed
US-7951730-B2 Decreasing the etch rate of silicon nitride by carbon addition APPLIED MATERIALS, INC. (US) 2011-05-31 US claimed
EP-2087146-A1 MULTILAYERED COATINGS FOR USE ON ELECTRONIC DEVICES OR OTHER ARTICLES The Trustees of Princeton University (US) 2009-08-12 EP claimed
US-7563728-B2 Methods of modifying interlayer adhesion APPLIED MATERIALS, INC. (US) 2009-07-21 US claimed
EP-1148539-A2 Method of depositing low K films using an oxidizing plasma APPLIED MATERIALS, INC. (US) 2001-10-24 EP claimed
US-20010026849-A1 Method of improving moisture resistance of low dielectric constant films APPLIED MATERIALS, INC. 2001-10-04 US claimed
EP-1131846-A1 CVD NANOPOROUS SILICA LOW DIELECTRIC CONSTANT FILMS Applied Materials, Inc. (US) 2001-09-12 EP claimed
EP-1119035-A2 Method for depositing a low dielectric constant film Applied Materials, Inc. (US) 2001-07-25 EP claimed
US-20010005546-A1 PLASMA PROCESSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS APPLIED MATERIALS, INC. 2001-06-28 US claimed
US-6245690-B1 EXPOSING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITED FILM OF OXIDIZED ORGANOSILICON COMPOUND TO A HYDROPHOBIC-IMPARTING SURFACTANT SUCH AS HEXAMETHYLDISILAZANE PRIOR TO THERMALLY CURING TO CONTROL CARBON CONTENT IN DEPOSITED FILM APPLIED MATERIALS, INC. 2001-06-12 US claimed
US-6171945-B1 CVD nanoporous silica low dielectric constant films APPLIED MATERIALS, INC. 2001-01-09 US claimed
EP-1063692-A1 Process for depositing a low dielectric constant film Applied Materials, Inc. (US) 2000-12-27 EP claimed
WO-2000024050-A1 CVD NANOPOROUS SILICA LOW DIELECTRIC CONSTANT FILMS APPLIED MATERIALS, INC. (US) 2000-04-27 WO claimed
EP-0224360-B1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 1992-04-08 EP claimed