Fluoride

Fluoride

SCHEMBL5128970

F.[LiH].[Nd].[Y]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride SCHEMBL15401252 1.00
Fluoride SCHEMBL28067528 1.00
Fluoride SCHEMBL28647856 1.00
SCHEMBL2541642 0.87
Fluoride SCHEMBL9770420 0.87
Fluoride SCHEMBL9788738 0.87
Fluoride SCHEMBL153218 0.87
Fluoride SCHEMBL27170369 0.87
Fluoride SCHEMBL3620448 0.87
Fluoride SCHEMBL9695953 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-222886767-U Single crystal furnace for growing neodymium-doped yttrium lithium fluoride 安徽环巢光电科技有限公司 2025-05-20 CN claimed
CN-118166426-A Single crystal furnace for growing neodymium-doped yttrium lithium fluoride 安徽环巢光电科技有限公司 2024-06-11 CN claimed
US-20060234519-A1 Contact doping and annealing systems and processes for nanowire thin films NANOSYS, INC. (US) 2006-10-19 US claimed
EP-4176999-B1 LASER CRYSTALLIZATION DEVICE, LASER CRYSTALLIZATION METHOD AND METHOD OF MANUFACTURING DISPLAY DEVICE, WITH USE OF THREE SOLID STATE LASERS SAMSUNG DISPLAY CO LTD (KR) 2025-11-26 EP disclosed
CN-222886767-U Single crystal furnace for growing neodymium-doped yttrium lithium fluoride 安徽环巢光电科技有限公司 2025-05-20 CN disclosed
CN-118166426-A Single crystal furnace for growing neodymium-doped yttrium lithium fluoride 安徽环巢光电科技有限公司 2024-06-11 CN disclosed
EP-4176999-A1 LASER CRYSTALLIZATION DEVICE, LASER CRYSTALLIZATION METHOD AND METHOD OF MANUFACTURING DISPLAY DEVICE, WITH USE OF THREE SOLID STATE LASERS Samsung Display Co., Ltd. (KR) 2023-05-10 EP disclosed
US-20230124284-A1 LASER CRYSTALLIZATION DEVICE, LASER CRYSTALLIZATION METHOD AND METHOD OF MANUFACTURING DISPLAY DEVICE SAMSUNG DISPLAY CO., LTD. (KR) 2023-04-20 US disclosed
CN-115976640-A Laser crystallization apparatus, laser crystallization method, and method of manufacturing display apparatus 三星显示有限公司 2023-04-18 CN disclosed
CN-114389139-A Deep ultraviolet DUV continuous wave CW laser and method for generating DUV CW laser radiation 科磊股份有限公司 2022-04-22 CN disclosed
US-11276822-B2 Method of patterned deposition employing pressurized fluids and thermal gradients SIMON FRASER UNIVERSITY (CA) 2022-03-15 US disclosed
CN-1332075-A Curing sealant using multi-frequency radiation IBM (US) 2002-01-23 CN disclosed
US-6048255-A Pulsed laser surface treatments for magnetic recording media SEAGATE TECHNOLOGY, INC. (US) 2000-04-11 US disclosed
EP-0853528-A1 LASER SURFACE TREATMENTS FOR MAGNETIC RECORDING MEDIA SEAGATE TECHNOLOGY, INC. (US) 1998-07-22 EP disclosed
WO-1997007931-A1 LASER SURFACE TREATMENTS FOR MAGNETIC RECORDING MEDIA SEAGATE TECHNOLOGY, INC. (US) 1997-03-06 WO disclosed
US-5590141-A Method and apparatus for generating and employing a high density of excited ions in a lasant ELECTRO SCIENTIFIC INDUSTRIES, INC. (US) 1996-12-31 US disclosed
US-5546416-A Cooling system and mounting for slab lasers and other optical devices NORTHROP GRUMMAN CORPORATION (US) 1996-08-13 US disclosed
EP-0637408-A1 METHOD AND APPARATUS FOR GENERATING AND EMPLOYING A HIGH DENSITY OF EXCITED IONS IN A LASANT ELECTRO SCIENTIFIC INDUSTRIES, INC. (US) 1995-02-08 EP disclosed
US-5323414-A Laser system and method employing a nonimaging concentrator ELECTRO SCIENTIFIC INDUSTRIES, INC. (US) 1994-06-21 US disclosed
WO-1993022811-A1 METHOD AND APPARATUS FOR GENERATING AND EMPLOYING A HIGH DENSITY OF EXCITED IONS IN A LASANT ELECTRO SCIENTIFIC INDUSTRIES, INC. (US) 1993-11-11 WO disclosed