⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL19400212 | 0.82 | — | — | |
| SCHEMBL15791673 | 0.82 | — | — | |
| SCHEMBL1136 | 0.71 | — | — | |
| SCHEMBL3140603 | 0.71 | — | — | |
| SCHEMBL2170 | 0.71 | — | — | |
| SCHEMBL2514959 | 0.71 | — | — | |
| SCHEMBL9074915 | 0.71 | — | — | |
| SCHEMBL17183929 | 0.71 | — | — | |
| SCHEMBL59560 | 0.71 | — | — | |
| SCHEMBL7546178 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9065048-B2 | Methods of forming germanium-antimony-tellurium materials and chalcogenide materials | MICRON TECHNOLOGY, INC. (US) | 2015-06-23 | — | — | US | disclosed |
| US-20140242748-A1 | METHODS OF FORMING GERMANIUM-ANTIMONY-TELLURIUM MATERIALS AND CHALCOGENIDE MATERIALS | MICRON TECHNOLOGY, INC. (US) | 2014-08-28 | — | — | US | disclosed |
| US-8759146-B2 | Methods of forming germanium-antimony-tellurium materials and methods of forming a semiconductor device structure including the same | MICRON TECHNOLOGY, INC. (US) | 2014-06-24 | — | — | US | disclosed |
| US-20120171812-A1 | METHODS OF FORMING GERMANIUM-ANTIMONY-TELLURIUM MATERIALS AND METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE INCLUDING THE SAME | MICRON TECHNOLOGY, INC. (US) | 2012-07-05 | — | — | US | disclosed |
| US-8148197-B2 | Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same | MICRON TECHNOLOGY, INC. (US) | 2012-04-03 | — | — | US | disclosed |
| US-20120028410-A1 | METHODS OF FORMING GERMANIUM-ANTIMONY-TELLURIUM MATERIALS AND A METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE INCLUDING THE SAME | MICRON TECHNOLOGY, INC. (US) | 2012-02-02 | — | — | US | disclosed |