⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL516427 | 0.89 | — | — | |
| SCHEMBL338715 | 0.89 | — | — | |
| SCHEMBL27620118 | 0.89 | — | — | |
| SCHEMBL15856059 | 0.80 | — | — | |
| SCHEMBL4376282 | 0.80 | — | — | |
| SCHEMBL23701679 | 0.80 | — | — | |
| SCHEMBL5586427 | 0.80 | — | — | |
| SCHEMBL2341724 | 0.80 | — | — | |
| SCHEMBL6821002 | 0.80 | — | — | |
| SCHEMBL2762535 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9349876-B2 | Nonvolatile semiconductor memory | KABUSHIKI KAISHA TOSHIBA (JP) | 2016-05-24 | — | — | US | claimed |
| US-8779502-B2 | Nonvolatile semiconductor memory | KABUSHIKI KAISHA TOSHIBA (JP) | 2014-07-15 | — | — | US | claimed |
| US-8772751-B2 | Variable resistance semiconductor memory device | KABUSHIKI KAISHA TOSHIBA (JP) | 2014-07-08 | — | — | US | claimed |
| US-20140167133-A1 | NONVOLATILE SEMICONDUCTOR MEMORY | KABUSHIKI KAISHA TOSHIBA (JP) | 2014-06-19 | — | — | US | claimed |
| US-8482053-B2 | Nonvolatile semiconductor memory device with high-K insulating film | KABUSHIKI KAISHA TOSHIBA (JP) | 2013-07-09 | — | — | US | claimed |
| US-20120139030-A1 | NONVOLATILE SEMICONDUCTOR MEMORY | KABUSHIKI KAISHA TOSHIBA (JP) | 2012-06-07 | — | — | US | claimed |
| US-20120025297-A1 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME | KABUSHIKI KAISHA TOSHIBA (JP) | 2012-02-02 | — | — | US | claimed |
| US-20250393211-A1 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE | KIOXIA CORPORATION (JP) | 2025-12-25 | — | — | US | disclosed |
| US-9805927-B2 | Nonvolatile semiconductor memory device | TOSHIBA MEMORY CORPORATION (JP) | 2017-10-31 | — | — | US | disclosed |
| US-20170033118-A1 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2017-02-02 | — | — | US | disclosed |
| US-9349876-B2 | Nonvolatile semiconductor memory | KABUSHIKI KAISHA TOSHIBA (JP) | 2016-05-24 | — | — | US | disclosed |
| US-8779502-B2 | Nonvolatile semiconductor memory | KABUSHIKI KAISHA TOSHIBA (JP) | 2014-07-15 | — | — | US | disclosed |
| US-20140167133-A1 | NONVOLATILE SEMICONDUCTOR MEMORY | KABUSHIKI KAISHA TOSHIBA (JP) | 2014-06-19 | — | — | US | disclosed |
| JP-5336872-B2 | — | — | 2013-11-06 | — | — | JP | disclosed |
| US-8482053-B2 | Nonvolatile semiconductor memory device with high-K insulating film | KABUSHIKI KAISHA TOSHIBA (JP) | 2013-07-09 | — | — | US | disclosed |
| US-8482053-B2 | Nonvolatile semiconductor memory device with high-K insulating film | KABUSHIKI KAISHA TOSHIBA (JP) | 2013-07-09 | — | — | US | disclosed |
| US-20120139030-A1 | NONVOLATILE SEMICONDUCTOR MEMORY | KABUSHIKI KAISHA TOSHIBA (JP) | 2012-06-07 | — | — | US | disclosed |
| US-20120025297-A1 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME | KABUSHIKI KAISHA TOSHIBA (JP) | 2012-02-02 | — | — | US | disclosed |
| US-20120025297-A1 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME | KABUSHIKI KAISHA TOSHIBA (JP) | 2012-02-02 | — | — | US | disclosed |
| WO-2010090187-A1 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREFOR | 株式会社 東芝 (JP) | 2010-08-12 | — | — | WO | disclosed |