⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28242987 | 0.87 | TSHR (0.50) | — | |
| SCHEMBL28243787 | 0.87 | TSHR (0.50) | — | |
| SCHEMBL27535277 | 0.87 | TSHR (0.50) | — | |
| SCHEMBL1057698 | 0.87 | TSHR (0.50) | — | |
| SCHEMBL28243781 | 0.87 | — | — | |
| SCHEMBL19774 | 0.77 | — | — | |
| SCHEMBL8385676 | 0.69 | TSHR (0.46) | — | |
| SCHEMBL68913 | 0.69 | — | — | |
| SCHEMBL9516267 | 0.67 | — | — | |
| SCHEMBL704535 | 0.67 | TSHR (0.43) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 367 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-117801003-A | Preparation method and preparation device of electronic grade bis (tertiary butyl amino) silane | 洛阳中硅高科技有限公司 | 2024-04-02 | — | — | CN | claimed |
| CN-116970337-A | Photo-curing self-repairing fluorine-silicon super-hydrophobic coating and preparation method and application thereof | 常州大学 | 2023-10-31 | — | — | CN | claimed |
| CN-116036631-A | Device and method for manufacturing electronic grade bis-tertiary butyl amino-silane | 贵州威顿晶磷电子材料股份有限公司 | 2023-05-02 | — | — | CN | claimed |
| CN-115939251-A | Method for preparing silicon-based photoelectrochemical hydrogen production photocathode based on tunneling passivation contact technology | 上海航天能源股份有限公司 | 2023-04-07 | — | — | CN | claimed |
| CN-115663006-A | Semiconductor image sensing device and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2023-01-31 | — | — | CN | claimed |
| US-9390912-B2 | Film forming method | TOKYO ELECTRON LIMITED (JP) | 2016-07-12 | — | — | US | claimed |
| CN-103088311-B | The formation method of crystal seed layer and the film build method of silicon-containing film | TOKYO ELECTRON LIMITED (JP) | 2016-05-11 | — | — | CN | claimed |
| CN-102891075-B | The film build method of amorphous silicon film and film formation device | TOKYO ELECTRON LIMITED (JP) | 2015-11-18 | — | — | CN | claimed |
| CN-102543795-B | Film formation device | TOKYO ELECTRON LIMITED (JP) | 2015-09-23 | — | — | CN | claimed |
| CN-102543830-B | Trench embedding method and film-forming apparatus | TOKYO ELECTRON LTD | 2015-02-11 | — | — | CN | claimed |
| EP-1418956-A1 | ENDOVASCULAR PROSTHESIS COATED WITH A FUNCTIONALISED DEXTRAN DERIVATIVE | Floréane Médical Implants (FR) | 2004-05-19 | — | — | EP | claimed |
| US-6716772-B2 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus | KOKUSAI ELECTRIC CO., LTD. (JP) | 2004-04-06 | — | — | US | claimed |
| CN-1138872-C | Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane | �����Ʒ�뻯ѧ��˾ | 2004-02-18 | — | — | CN | claimed |
| WO-2003011355-A1 | ENDOVASCULAR PROSTHESIS COATED WITH A FUNCTIONALISED DEXTRAN DERIVATIVE | SOFRADIM PRODUCTION (FR) | 2003-02-13 | — | — | WO | claimed |
| US-20020197890-A1 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus | KOKUSAI ELECTRIC CO., LTD. | 2002-12-26 | — | — | US | claimed |
| US-6486083-B1 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus | KOKUSAI ELECTRIC CO., LTD. (JP) | 2002-11-26 | — | — | US | claimed |
| US-20010034129-A1 | Capacitor constructions, DRAM constructions, semiconductive material assemblies, etching processes, and methods for forming capacitors and DRAMs | MOORE JOHN T (US) | 2001-10-25 | — | — | US | claimed |
| US-6251802-B1 | REDUCING ETCH RATE | MICRON TECHNOLOGY, INC. | 2001-06-26 | — | — | US | claimed |
| CN-1270596-A | Bimetallic complexes and polymerization catalysts obtained therefrom | DOW CHEMICAL CO (US) | 2000-10-18 | — | — | CN | claimed |
| CN-1239155-A | Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane | AIR PROD & CHEM (US) | 1999-12-22 | — | — | CN | claimed |