⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5574406 | 0.87 | — | — | |
| SCHEMBL8610119 | 0.75 | — | — | |
| SCHEMBL1701805 | 0.75 | — | — | |
| SCHEMBL3608111 | 0.75 | — | — | |
| SCHEMBL5462990 | 0.75 | — | — | |
| SCHEMBL18886767 | 0.71 | — | — | |
| SCHEMBL16037 | 0.71 | — | — | |
| SCHEMBL10578755 | 0.71 | — | — | |
| SCHEMBL29352070 | 0.71 | — | — | |
| SCHEMBL4865213 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10290730-B1 | Semiconductor power device | EPISTAR CORPORATION (TW) | 2019-05-14 | — | — | US | claimed |
| US-8501597-B2 | Method for fabricating group III-nitride semiconductor | ACADEMIA SINICA (TW) | 2013-08-06 | — | — | US | claimed |
| US-20120028446-A1 | METHOD FOR FABRICATING GROUP III-NITRIDE SEMICONDUCTOR | ACADEMIA SINICA (TW) | 2012-02-02 | — | — | US | claimed |
| EP-4394848-A1 | METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE | Commissariat à l'énergie atomique et aux énergies alternatives (FR) | 2024-07-03 | — | — | EP | disclosed |
| US-20240204130-A1 | METHOD OF MANUFACTURING AN ELECTRONIC DEVICE | Commissariat à I'énergie atomique et aux énergies alternatives (FR) | 2024-06-20 | — | — | US | disclosed |
| EP-3929634-B1 | LIGHT-EMITTING DEVICE, PIXEL COMPRISING A PLURALITY OF SUCH DEVICES, PIXEL MATRIX AND ASSOCIATED MANUFACTURING METHODS | COMMISSARIAT ENERGIE ATOMIQUE (FR) | 2023-03-22 | — | — | EP | disclosed |
| EP-3929634-A1 | LIGHT-EMITTING DEVICE, PIXEL COMPRISING A PLURALITY OF SUCH DEVICES, PIXEL MATRIX AND ASSOCIATED MANUFACTURING METHODS | Commissariat à l'Energie Atomique et aux Energies Alternatives (FR) | 2021-12-29 | — | — | EP | disclosed |
| EP-3900018-A1 | PROCESS FOR PRODUCING A SEMICONDUCTOR COMPONENT BASED ON A III-N COMPOUND | Commissariat à l'Energie Atomique et aux Energies Alternatives (FR) | 2021-10-27 | — | — | EP | disclosed |
| EP-3900055-A1 | OPTOELECTRONIC DEVICE WITH PN JUNCTION | Commissariat à l'Energie Atomique et aux Energies Alternatives (FR) | 2021-10-27 | — | — | EP | disclosed |
| US-10960092-B2 | Automatic eradication of bio-related contaminants from handles | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2021-03-30 | — | — | US | disclosed |
| US-10290730-B1 | Semiconductor power device | EPISTAR CORPORATION (TW) | 2019-05-14 | — | — | US | disclosed |
| US-9142413-B2 | Methods for growing a non-phase separated group-III nitride semiconductor alloy | GEORGIA TECH RESEARCH CORPORATION (US) | 2015-09-22 | — | — | US | disclosed |
| US-20130244408-A1 | Systems And Methods For Growing A Non-Phase Separated Group-III Nitride Semiconductor Alloy | GEORGIA TECH RESEARCH CORPORATION (US) | 2013-09-19 | — | — | US | disclosed |
| US-8501597-B2 | Method for fabricating group III-nitride semiconductor | ACADEMIA SINICA (TW) | 2013-08-06 | — | — | US | disclosed |
| US-20130118400-A1 | METHOD OF FORMING EPITAXIAL ZINC OXIDE FILMS | AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (SG) | 2013-05-16 | — | — | US | disclosed |
| WO-2012064748-A1 | SYSTEMS AND METHODS FOR GROWING A NON-PHASE SEPARATED GROUP-III NITRIDE SEMICONDUCTOR ALLOY | GEORGIA TECH RESEARCH CORPORATION (US) | 2012-05-18 | — | — | WO | disclosed |
| US-20120028446-A1 | METHOD FOR FABRICATING GROUP III-NITRIDE SEMICONDUCTOR | ACADEMIA SINICA (TW) | 2012-02-02 | — | — | US | disclosed |
| CN-101872819-A | Yellow light emitting diode and light emitting device | FOXSEMI INTEGRATE TECHNOLOGY SHANGHAI INC | 2010-10-27 | — | — | CN | disclosed |
| US-7589360-B2 | Group III nitride semiconductor devices and methods of making | GENERAL ELECTRIC COMPANY (US) | 2009-09-15 | — | — | US | disclosed |
| US-20080121927-A1 | Group III nitride semiconductor devices and methods of making | GENERAL ELECTRIC COMPANY | 2008-05-29 | — | — | US | disclosed |