⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10712244 | 0.72 | — | — | |
| SCHEMBL3115479 | 0.72 | — | — | |
| SCHEMBL17691361 | 0.69 | — | — | |
| SCHEMBL19101178 | 0.69 | — | — | |
| SCHEMBL10024710 | 0.69 | — | — | |
| SCHEMBL15309820 | 0.69 | — | — | |
| SCHEMBL17691321 | 0.69 | — | — | |
| SCHEMBL19101195 | 0.69 | — | — | |
| SCHEMBL21851780 | 0.67 | — | — | |
| SCHEMBL26497197 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 235 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250313953-A1 | METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS | ASM IP HOLDING B.V. (NL) | 2025-10-09 | — | — | US | claimed |
| US-20250270698-A1 | BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS | VERSUM MATERIALS US, LLC | 2025-08-28 | — | — | US | claimed |
| US-12378667-B2 | Methods and systems for forming doped silicon nitride films | ASM IP HOLDING B.V. (NL) | 2025-08-05 | — | — | US | claimed |
| CN-119480791-A | Substrate processing method | ASM IP私人控股有限公司 | 2025-02-18 | — | — | CN | claimed |
| US-20250046605-A1 | SUBSTRATE PROCESSING METHOD | ASM IP HOLDING B.V. (NL) | 2025-02-06 | — | — | US | claimed |
| EP-4493734-A1 | BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS | Versum Materials US, LLC (US) | 2025-01-22 | — | — | EP | claimed |
| CN-119213168-A | Boron-containing precursors for ALD deposition of boron nitride films | 弗萨姆材料美国有限责任公司 | 2024-12-27 | — | — | CN | claimed |
| US-20230407477-A1 | SUBSTRATE PROCESSING APPARATUS INCLUDING IMPROVED EXHAUST STRUCTURE | ASM IP HOLDING B.V. (NL) | 2023-12-21 | — | — | US | claimed |
| CN-117248192-A | Substrate processing apparatus including improved exhaust structure | ASM IP私人控股有限公司 | 2023-12-19 | — | — | CN | claimed |
| WO-2023201271-A1 | BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS | VERSUM MATERIALS US, LLC (US) | 2023-10-19 | — | — | WO | claimed |
| US-20100009546-A1 | Aminosilanes for Shallow Trench Isolation Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2010-01-14 | — | — | US | claimed |
| EP-2144279-A2 | Aminosilanes for shallow trench isolation films | Air Products and Chemicals, Inc. (US) | 2010-01-13 | — | — | EP | claimed |
| US-7531452-B2 | Strained metal silicon nitride films and method of forming | TOKYO ELECTRON LIMITED (JP) | 2009-05-12 | — | — | US | claimed |
| US-7494937-B2 | Strained metal silicon nitride films and method of forming | TOKYO ELECTRON LIMITED (JP) | 2009-02-24 | — | — | US | claimed |
| WO-2008121463-A1 | METHOD FOR FORMING STRAINED SILICON NITRIDE FILMS AND A DEVICE CONTAINING SUCH FILMS | TOKYO ELECTRON LIMITED (JP) | 2008-10-09 | — | — | WO | claimed |
| US-20080242116-A1 | Method for forming strained silicon nitride films and a device containing such films | TOKYO ELECTRON LIMITED (JP) | 2008-10-02 | — | — | US | claimed |
| US-20080241388-A1 | Strained metal silicon nitride films and method of forming | TOKYO ELECTRON LIMITED (JP) | 2008-10-02 | — | — | US | claimed |
| US-20080242077-A1 | Strained metal silicon nitride films and method of forming | TOKYO ELECTRON LIMITED (JP) | 2008-10-02 | — | — | US | claimed |
| US-20080081470-A1 | Method for forming strained silicon nitride films and a device containing such films | TOKYO ELECTRON LIMITED (JP) | 2008-04-03 | — | — | US | claimed |
| US-20060062917-A1 | Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane | APPLIED MATERIALS, INC. | 2006-03-23 | — | — | US | claimed |