⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Zinc Ion SCHEMBL30416679 | 0.87 | — | — | |
| Zinc Ion SCHEMBL30088527 | 0.87 | — | — | |
| Zinc Ion SCHEMBL29395959 | 0.87 | — | — | |
| Zinc Ion SCHEMBL65482 | 0.87 | — | — | |
| Zinc Ion SCHEMBL5908729 | 0.87 | — | — | |
| Zinc Ion SCHEMBL29350087 | 0.87 | — | — | |
| Zinc Ion SCHEMBL19272482 | 0.87 | — | — | |
| Zinc Ion SCHEMBL29630377 | 0.87 | — | — | |
| SCHEMBL1536244 | 0.87 | — | — | |
| Zinc Ion SCHEMBL24564 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 395 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240234432-A1 | DISPLAY DEVICE INCLUDING TRANSISTOR AND MANUFACTURING METHOD THEREOF | SEMICONDUCTOR ENERGY LAB (JP) | 2024-07-11 | — | — | US | disclosed |
| US-20240162234-A1 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LAB (JP) | 2024-05-16 | — | — | US | disclosed |
| US-11978741-B2 | Display device including transistor and manufacturing method thereof | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2024-05-07 | — | — | US | disclosed |
| US-11967505-B2 | Method for manufacturing sputtering target, method for forming oxide film, and transistor | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2024-04-23 | — | — | US | disclosed |
| US-11955557-B2 | Semiconductor device and manufacturing method thereof | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2024-04-09 | — | — | US | disclosed |
| US-11855194-B2 | Method for manufacturing semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2023-12-26 | — | — | US | disclosed |
| CN-110718557-B | Semiconductor device and method for manufacturing semiconductor device | 株式会社半导体能源研究所 | 2023-12-26 | — | — | CN | disclosed |
| US-20230387318-A1 | SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LAB (JP) | 2023-11-30 | — | — | US | disclosed |
| US-20230387276-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LAB (JP) | 2023-11-30 | — | — | US | disclosed |
| US-11824062-B2 | Thin film transistor, method for manufacturing the same, and semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2023-11-21 | — | — | US | disclosed |
| US-20100207118-A1 | TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR, AND MANUFACTURING METHOD OF THE TRANSISTOR AND THE SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2010-08-19 | — | — | US | disclosed |
| US-20100200851-A1 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2010-08-12 | — | — | US | disclosed |
| CN-101800250-A | The manufacture method of semiconductor device and semiconductor device | SEMICONDUCTOR ENERGY LAB | 2010-08-11 | — | — | CN | disclosed |
| US-20100193783-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2010-08-05 | — | — | US | disclosed |
| US-20100193782-A1 | TRANSISTOR AND METHOD FOR MANUFACTURING THE TRANSISTOR | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2010-08-05 | — | — | US | disclosed |
| CN-101794820-A | Semiconductor device and manufacturing method thereof | SEMICONDUCTOR ENERGY LAB | 2010-08-04 | — | — | CN | disclosed |
| US-20100187523-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2010-07-29 | — | — | US | disclosed |
| US-20100163867-A1 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE HAVING THE SAME | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2010-07-01 | — | — | US | disclosed |
| US-20100155719-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2010-06-24 | — | — | US | disclosed |
| WO-2010071183-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2010-06-24 | — | — | WO | disclosed |