SCHEMBL5363516

SCHEMBL5363516

CC(C)(C)N(C(C)(C)C)[Si](N(C(C)(C)C)C(C)(C)C)(N(C(C)(C)C)C(C)(C)C)N(C(C)(C)C)C(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17691373 0.70
SCHEMBL19101204 0.70
SCHEMBL233901 0.65
SCHEMBL231522 0.65
SCHEMBL2189091 0.63
SCHEMBL529520 0.60
SCHEMBL124148 0.56
SCHEMBL184857 0.56
SCHEMBL20212016 0.56
SCHEMBL25490568 0.55

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250279287-A1 METAL OXIDE FILM AND METAL FILM LINER COMBINATION IN A SEMICONDUCTOR STRUCTURE, RELATED DEVICES, RELATED SYSTEMS, AND RELATED METHODS ASM IP HOLDING B.V. (NL) 2025-09-04 US disclosed
CN-119895076-A Method for depositing silicon-based dielectric film 应用材料公司 2025-04-25 CN disclosed
WO-2024020132-A1 METHOD OF DEPOSITING SILICON BASED DIELECTRIC FILM APPLIED MATERIALS, INC. (US) 2024-01-25 WO disclosed
US-20240026527-A1 METHOD OF DEPOSITING SILICON BASED DIELECTRIC FILM APPLIED MATERIALS, INC. (US) 2024-01-25 US disclosed
US-8080453-B1 Gate stack having nitride layer CYPRESS SEMICONDUCTOR CORPORATION (US) 2011-12-20 US disclosed
US-7256083-B1 Nitride layer on a gate stack CYPRESS SEMICONDUCTOR CORPORATION (US) 2007-08-14 US disclosed